High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering

Journal of the Electrochemical Society

Volumn 155, Issue 6, 2008, Pages

  Lim, Wantae ^a,c   Kim, Seonhoo ^a   Wang, Yu Lin ^a,c   Lee, J W ^a   Norton, D P ^a,c   Pearton, S J ^a,c   Ren, F ^a,c   Kravchenko, I I ^b  

^a University of Florida   (United States)

^b Electrochemical Society ^*  (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTROCHEMICAL ELECTRODES; GATE DIELECTRICS; MAGNETRON SPUTTERING; SEMICONDUCTING INDIUM COMPOUNDS; THRESHOLD VOLTAGE;

CHANNEL LAYER; INDIUM ZINC OXIDE; RADIO-FREQUENCY SPUTTERING; ROOM TEMPERATURE;

THIN FILM TRANSISTORS;

EID: 43049106497     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2903294     Document Type: Article

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