Uniformity and bias-temperature instability of bottom-gate zinc oxide thin-film transistors (ZnO TFTs)

Journal of the Society for Information Display

Volumn 18, Issue 10, 2010, Pages 773-778

  Furuta, Mamoru ^a   Kimura, Mutsumi ^b   Hiramatsu, Takahiro ^a   Nakanishi, Takashi ^b   Li, Chaoyang ^a   Hirao, Takashi ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b RYUKOKU UNIVERSITY   (Japan)

Author keywords

Bias temperature instability; Short range uniformity; Thin film transistor (TFT); Zinc oxide (ZnO)

Indexed keywords

BIAS TEMPERATURE INSTABILITY; CHARGE TRAP; DEEP ENERGY LEVELS; GATE INSULATOR; GATE VOLTAGES; GATE-BIAS STRESS; PLASMA TREATMENT; POSITIVE SHIFT; SHORT-RANGE UNIFORMITY; STACKED GATE; STRESS TEST; SUBTHRESHOLD CHARACTERISTICS; THIN-FILM TRANSISTOR (TFT); TRAP DENSITY; ZNO;

CHARGE TRAPPING; CLARIFICATION; DRAIN CURRENT; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON NITRIDE; STABILITY; SURFACE TREATMENT; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77958195320     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID18.10.773     Document Type: Article

References (24)

1. T. Tsujimura, "Amorphous/microcrystalline silicon thin film transistor characteristics for large size OLED television driving," Jpn. J. Appl. Phys. 43, 5122 (2004).
2. 2T.Hirao et al., "Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs," J. Soc. Info. Display 15/1, 17 (2007).
3. 3T. Hirao et al., "Bottom-gate zinc oxide thin-film transistors (ZnO TFTs) for AM-LCDs," IEEE Trans. Electron. Dev. 55, 3136 (2008).
4. H-N. Lee et al., "Oxide TFT with multilayer gate insulator for backplane of AMOLED device," J. Soc. Info. Display 16/2, 265 (2008).
5. Ü. Özgür et al., "A comprehensive review of ZnO material and devices," J. Appl. Phys. 98, 041301 (2005).
6. T. Hirao et al., "High mobility top-gate zinc oxide thin-film transistors (ZnO TFTs) for active-matrix liquid crystal displays," SID Symposium Digest 37, 18-21 (2006).
7. K. Nomura et al., "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488 (2004).
8. E. Fortunato et al., "Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/V-sec," Phys. Status Solidi (RPL) 1, R34 (2007).
9. R. B. M. Cross and M. M. De Souza, "Investigating the stability of zinc oxide thin film transistors," Appl. Phys. Lett. 89, 263513 (2006).
10. M. Fujii et al., "Thermal analysis of degradation in Ga2O3-In2O3-ZnO thin-film transistors," Jpn. J. Appl. Phys. 47, 6236 (2008).
11. A. Suresh and J. F. Muth, "Bias stress of indium gallium zinc oxide channel based transparent thin film transistors," Appl. Phys. Lett. 92, 033502 (2008).
12. J. K. Jeong et al., "Origin of threshold voltage instability in indium-galliumzinc oxide thin film transistors," Appl. Phys. Lett. 93, 123508 (2008).
13. J-M. Lee et al., "Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin-film transistors," Appl. Phys. Lett. 93, 093504 (2008).
14. K. Nomura et al., "Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors," Appl. Phys. Lett. 95, 013502 (2009).
15. R. B. M. Cross et al., "A comparison of the performance and stability of ZNO TFTs with silicon dioxide and nitride as gate insulator," IEEE Trans. Electron. Dev. 55, 1109 (2008).
16. P. Barquinha et al., "Performance and stability of low temperature transparent thin-film transistors using amorphous multicomponent dielectric," J. Electrchem. Soc. 156, H824 (2009).
17. M. Furuta et al., "Effect of surface treatment of gate insulator on uniformity of bottom-gate ZnO thin-film transistors," Electrochem. Solid-State Lett. 13, H101 (2010).
18. T. Matsuda et al., "Influence of amorphous buffer layers on the crystallinity of sputter-deposited undoped ZnO films," J. Crystal Growth 310, 31 (2008).
19. M. Furuta et al., "Thermal stability and sheet resistance of undoped ZnO films deposited on insulators," Electrochem. Solid-State Lett. 12, K74 (2009).
20. M. Furuta et al., "Oxygen bombardment effects on average crystallite size ofsputter-deposited ZnO films," J. Non-Cryst. Solids 354, 1926 (2008).
21. M. Kimura et al., "Trap densities in amorphous-InGaZnO4 thin-film transistors," Appl. Phys. Lett. 92, 133512 (2008).
22. M. J. Powell et al., "Bias-dependence of instability mechanisms in amorphous silicon thin-film transistors," Appl. Phys. Lett. 51, 1242 (1987).
23. M. J. Powell et al., "Defect pool in amorphous-silicon thin-film transistors," Phys. Rev. B 45, 45 (1992).
24. F. R. Libsch and J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thinfilm transistors," Appl. Phys. Lett. 62, 1286 (1993).