"hump" characteristics and edge effects in polysilicon thin film transistors

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Valletta, A ^a   Gaucci, P ^a   Mariucci, L ^a   Fortunato, G ^a   Templier, F ^b  

^a CNR   (Italy)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL FLOW; MATHEMATICAL MODELS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

CHANNEL EDGES; DIFFERENT PROCESSES; EDGE EFFECTS; EDGE REGIONS; ELECTRICAL FIELDS; ELECTRICAL MEASUREMENTS; HUMP EFFECTS; INTERFACE STATES; NUMERICAL SIMULATIONS; OXIDE FIXED CHARGES; PARALLEL CIRCUITS; PARASITIC TRANSISTORS; POLYCRYSTALLINE SILICONS; POLYSILICON THIN-FILM TRANSISTORS; SILICON ON INSULATORS; SUBTHRESHOLD REGIMES; SUBTHRESHOLD SWINGS; TRANSFER CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 58149231480     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3050323     Document Type: Article

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