Density of states of a-InGaZnO from temperature-dependent field-effect studies

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1177-1183

  Chen, Charlene ^a   Abe, Katsumi ^b   Kumomi, Hideya ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b CANON INC   (Japan)

Author keywords

Activation energy; Amorphous In Ga Zn O (a InGaZnO); Density of localized gap states (DOS); Meyer Neldel (MN) rule; Thin film transistor (TFT)

Indexed keywords

AMORPHOUS IN-GA-ZN-O (A-INGAZNO); DENSITY OF LOCALIZED GAP STATES (DOS); DENSITY OF STATE; EFFECT OF TEMPERATURE; ELECTRICAL PROPERTY; FIELD-EFFECT; FIELD-EFFECT MOBILITIES; GAP STATE; MEYER - NELDEL (MN) RULE; MEYER-NELDEL RULES; ON-OFF RATIO; PREFACTOR; RADIO FREQUENCIES; SELF-CONSISTENT METHOD; SPICE SIMULATIONS; SUBTHRESHOLD SLOPE; TEMPERATURE DEPENDENT; THERMALLY ACTIVATED; THIN FILM TRANSISTOR (TFT);

DRAIN CURRENT; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM; THERMAL EFFECTS; THIN FILM TRANSISTORS; THIN FILMS; ZINC;

ACTIVATION ENERGY;

EID: 67349287542     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2019157     Document Type: Article

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