메뉴 건너뛰기




Volumn 58, Issue 9, 2011, Pages 1996-2009

Technology variability from a design perspective

Author keywords

CMOS; digital logic; SRAM; static timing analysis; variability

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER CIRCUITS; LOGIC DESIGN; SEMICONDUCTOR DEVICES; STATIC RANDOM ACCESS STORAGE;

EID: 80052907957     PISSN: 15498328     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2011.2165389     Document Type: Review
Times cited : (17)

References (62)
  • 1
    • 0036474722 scopus 로고    scopus 로고
    • Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for Gigascale integration
    • DOI 10.1109/4.982424, PII S0018920002006637
    • K. A. Bowman, S. G. Duvall, and J. D. Meindl, "Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration," IEEE J. Solid-State Circuits, vol. 37, no. 2, pp. 183-190, Feb. 2002. (Pubitemid 34278433)
    • (2002) IEEE Journal of Solid-state Circuits , vol.37 , Issue.2 , pp. 183-190
    • Bowman, K.A.1    Duvall, S.G.2    Meindl, J.D.3
  • 3
    • 33748535403 scopus 로고    scopus 로고
    • High-performance CMOS variability in the 65-nm regime and beyond
    • Jul./Sep.
    • K. Bernstein et al, "High-performance CMOS variability in the 65-nm regime and beyond," IBM J. Res. Develop., vol. 50, no. 4-5, pp. 433-449, Jul./Sep. 2006.
    • (2006) IBM J. Res. Develop. , vol.50 , Issue.4-5 , pp. 433-449
    • Bernstein Et Al, K.1
  • 4
    • 68549087134 scopus 로고    scopus 로고
    • Measurement and analysis of variability in 45 nm strained-Si CMOS technology
    • Aug.
    • L.-T. Pang, K. Qian, C. Spanos, and B. Nikoli, "Measurement and analysis of variability in 45 nm strained-Si CMOS technology," IEEE J. Solid-State Circuits, vol. 44, no. 8, pp. 2233-2244, Aug. 2009.
    • (2009) IEEE J. Solid-State Circuits , vol.44 , Issue.8 , pp. 2233-2244
    • Pang, L.-T.1    Qian, K.2    Spanos, C.3    Nikoli, B.4
  • 7
    • 43249103476 scopus 로고    scopus 로고
    • A comprehensive model of process variability for statistical timing optimization
    • V. K. Singh and M. L. Rieger, Eds.
    • K. Qian and C. J. Spanos, "A comprehensive model of process variability for statistical timing optimization," in Proc. SPIE Design for Manufacturability through Design-Process Integration II, V. K. Singh and M. L. Rieger, Eds., 2008, vol. 6925, pp. 1G-1-11.
    • (2008) Proc. SPIE Design for Manufacturability Through Design-Process Integration II , vol.6925
    • Qian, K.1    Spanos, C.J.2
  • 8
    • 0032674029 scopus 로고    scopus 로고
    • Subwavelength lithography and its potential impact on design and EDA
    • New Orleans, LA Jun.
    • A. B. Kahng and Y. C. Pati, "Subwavelength lithography and its potential impact on design and EDA," in Proc. Design Autom. Conf., New Orleans, LA, Jun. 1999, pp. 799-804.
    • (1999) Proc. Design Autom. Conf. , pp. 799-804
    • Kahng, A.B.1    Pati, Y.C.2
  • 9
    • 0033714120 scopus 로고    scopus 로고
    • Modeling line edge roughness effects in sub 100 nanometer gate length devices
    • Seattle, WA Sep. 6-8
    • P. Oldiges et al., "Modeling line edge roughness effects in sub 100 nanometer gate length devices," in Proc. Int. Conf. Simul. Semi-cond. Processes Devices (SISPAD), Seattle, WA, Sep. 6-8, 2000, pp. 131-134.
    • (2000) Proc. Int. Conf. Simul. Semi-cond. Processes Devices (SISPAD) , pp. 131-134
    • Oldiges, P.1
  • 10
    • 0036247929 scopus 로고    scopus 로고
    • Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
    • DOI 10.1109/16.974757, PII S001893830200240X
    • A. Asenov, S. Kaya, and J. H. Davies, "Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations," IEEE Trans. Electron Devices, vol. 49, no. 1, pp. 112-119, Jan. 2002. (Pubitemid 34504288)
    • (2002) IEEE Transactions on Electron Devices , vol.49 , Issue.1 , pp. 112-119
    • Asenov, A.1    Kaya, S.2    Davies, J.H.3
  • 12
    • 34548727432 scopus 로고    scopus 로고
    • ccmin degradation of SRAM fabricated with high-k gate dielectrics
    • DOI 10.1109/RELPHY.2007.369930, 4227671, 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
    • J. C. Lin, A. S. Oates, and C. H. Yu, "Time dependent Vccmm degradation of SRAM fabricated with high-k gate dielectrics," in Proc. 45th Annu. IEEE Int. Rel. Phys. Symp., Phoenix, AZ, Apr. 15-19, 2007, pp. 439-444. (Pubitemid 47431978)
    • (2007) Annual Proceedings - Reliability Physics (Symposium) , pp. 439-444
    • Lin, J.C.1    Oates, A.S.2    Yu, C.H.3
  • 13
    • 71049144927 scopus 로고    scopus 로고
    • Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm
    • Kyoto, Japan Jun.
    • N. Tega et al., "Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm," in Proc. Symp. VLSI Tech. Dig Tech. Papers, Kyoto, Japan, Jun. 2009, pp. 50-51.
    • (2009) Proc. Symp. VLSI Tech. Dig Tech. Papers , pp. 50-51
    • Tega, N.1
  • 14
    • 33645792117 scopus 로고    scopus 로고
    • Variability: Modeling and its impact on design
    • Mar.
    • H. Onodera, "Variability: Modeling and its impact on design," IEICE Trans. Electron., vol. E89-C, no. 3, pp. 342-348, Mar. 2006.
    • (2006) IEICE Trans. Electron. , vol.E89-C , Issue.3 , pp. 342-348
    • Onodera, H.1
  • 15
    • 66149185555 scopus 로고    scopus 로고
    • Measurements and analysis of process variability in 90 nm CMOS
    • May
    • L.-T. Pang and B. Nikoli, "Measurements and analysis of process variability in 90 nm CMOS," IEEE J. Solid-State Circuits, vol. 44, no. 5, pp. 1655-1663, May 2009.
    • (2009) IEEE J. Solid-State Circuits , vol.44 , Issue.5 , pp. 1655-1663
    • Pang, L.-T.1    Nikoli, B.2
  • 16
    • 1342287051 scopus 로고    scopus 로고
    • Characterization of spatial in-trafield gate CD variability, its impact on circuit performance, and spatial mask-level correction
    • Jan.
    • M. Orshansky, L. Milor, and C. Hu, "Characterization of spatial in-trafield gate CD variability, its impact on circuit performance, and spatial mask-level correction," IEEE Trans. Semicond. Manuf, vol. 17, no. 1,pp. 2-11, Jan. 2004.
    • (2004) IEEE Trans. Semicond. Manuf , vol.17 , Issue.1 , pp. 2-11
    • Orshansky, M.1    Milor, L.2    Hu, C.3
  • 17
    • 0032026253 scopus 로고    scopus 로고
    • Investigation of interconnect capacitance characterization using charge-based capacitance measurement (CBCM) technique and three-dimensional simulation
    • PII S001892009801018X
    • D. Sylvester, J. C. Chen, and C. Hu, "Investigation of interconnect capacitance characterization using charge-based capacitance measurement (CBCM) technique and three-dimensional simulation," IEEE J. Solid-State Circuits, vol. 33, no. 3, pp. 449-453, Mar. 1998. (Pubitemid 128573463)
    • (1998) IEEE Journal of Solid-State Circuits , vol.33 , Issue.3 , pp. 449-453
    • Sylvester, D.1    Chen, J.C.2    Hu, C.3
  • 21
    • 39749152930 scopus 로고    scopus 로고
    • Impact of layout on 90 nm CMOS process parameter fluctuations
    • Honolulu, HI Jun.
    • L. T. Pang and B. Nikoli, "Impact of layout on 90 nm CMOS process parameter fluctuations," in Proc. Symp. VLSI Circuits, Dig. Tech. Papers, Honolulu, HI, Jun. 2006, pp. 84-85.
    • (2006) Proc. Symp. VLSI Circuits, Dig. Tech. Papers , pp. 84-85
    • Pang, L.T.1    Nikoli, B.2
  • 22
    • 34547224000 scopus 로고    scopus 로고
    • On-chip transistor characterisation arrays for variability analysis
    • July 19
    • V. Wang and K. L. Shepard, "On-chip transistor characterisation arrays for variability analysis," Electron. Lett., vol. 43, no. 15, pp. 806-807, July 19, 2007.
    • (2007) Electron. Lett. , vol.43 , Issue.15 , pp. 806-807
    • Wang, V.1    Shepard, K.L.2
  • 23
    • 77649148729 scopus 로고    scopus 로고
    • All-digital circuits for measurement of spatial variationin digital circuits
    • Mar
    • N. Drego, A. Chandrakasan, and D. Boning, "All-digital circuits for measurement of spatial variationin digital circuits," IEEE J. Solid-State Circuits, vol. 45, no. 3, pp. 640-651, Mar. 2010.
    • (2010) IEEE J. Solid-State Circuits , vol.45 , Issue.3 , pp. 640-651
    • Drego, N.1    Chandrakasan, A.2    Boning, D.3
  • 25
    • 66749187140 scopus 로고    scopus 로고
    • Parameter-specific electronic measurement and analysis of sources of variation using ring oscillators
    • San Jose, CA Feb. 22-27
    • L. T.-N. Wang, L.-T. Pang, A. R. Neureuther, and B. Nikolić, "Parameter-specific electronic measurement and analysis of sources of variation using ring oscillators," in Proc. SPIE 7275, San Jose, CA, Feb. 22-27, 2009, pp. 72750L-7275L-10.
    • (2009) Proc. SPIE 7275
    • Wang, L.T.-N.1    Pang, L.-T.2    Neureuther, A.R.3    Nikolić, B.4
  • 26
    • 74049119406 scopus 로고    scopus 로고
    • Fixed-and variable-length ring oscillators for variability characterizationin 45nm CMOS
    • San Jose, CA, Sep. 13-16
    • J.-H. Park, L.-T. Pang, K. Duong, and B. Nikoli, "Fixed-and variable-length ring oscillators for variability characterizationin 45nm CMOS," in IEEE Custom Integr. Circuits Conf., San Jose, CA, Sep. 13-16, 2009, pp. 519-522.
    • (2009) IEEE Custom Integr. Circuits Conf. , pp. 519-522
    • Park, J.-H.1    Pang, L.-T.2    Duong, K.3    Nikoli, B.4
  • 27
    • 2642517064 scopus 로고    scopus 로고
    • Analysis and characterization of device variations in an LSI chip using an integrated device matrix array
    • May
    • S. Ohkawa, M. Aoki, and H. Masuda, "Analysis and characterization of device variations in an LSI chip using an integrated device matrix array," IEEE Trans. Semicond. Manuf., vol. 17, no. 2, pp. 155-165, May 2004.
    • (2004) IEEE Trans. Semicond. Manuf. , vol.17 , Issue.2 , pp. 155-165
    • Ohkawa, S.1    Aoki, M.2    Masuda, H.3
  • 28
    • 33144475038 scopus 로고    scopus 로고
    • Ring oscillators for CMOS process tuning and variability control
    • Feb.
    • M. Bhushan, A. Gattiker, M. B. Ketchen, and K. K. Das, "Ring oscillators for CMOS process tuning and variability control," IEEE Trans. Semicond. Manuf., vol. 19, no. 1, pp. 10-18, Feb. 2006.
    • (2006) IEEE Trans. Semicond. Manuf. , vol.19 , Issue.1 , pp. 10-18
    • Bhushan, M.1    Gattiker, A.2    Ketchen, M.B.3    Das, K.K.4
  • 29
    • 41549122836 scopus 로고    scopus 로고
    • Silicon odometer: An on-chip reliability monitor for measuring frequency degradation of digital circuits
    • DOI 10.1109/JSSC.2008.917502
    • T. Kim, R. Persaud, and C. H. Kim, "Silicon odometer: An on-chip reliability monitor for measuring frequency degradation of digital circuits," IEEE J. Solid State Circuits, vol. 43, no. 4, pp. 874-880, Apr. 2008. (Pubitemid 351464080)
    • (2008) IEEE Journal of Solid-State Circuits , vol.43 , Issue.4 , pp. 874-880
    • Kim, T.-H.1    Persaud, R.2    Kim, C.H.3
  • 30
    • 67649103779 scopus 로고    scopus 로고
    • Measurement of delay mismatch due to process variations by means of modified ring oscillators
    • Kobe, Japan, May
    • B. Zhou and A. Khouas, "Measurement of delay mismatch due to process variations by means of modified ring oscillators," in Proc. 2005 IEEE Int. Symp. Circuits Syst. (ISCAS), Kobe, Japan, May 2005, pp. 5246-5249.
    • (2005) Proc. 2005 IEEE Int. Symp. Circuits Syst. (ISCAS) , pp. 5246-5249
    • Zhou, B.1    Khouas, A.2
  • 32
    • 3843087304 scopus 로고    scopus 로고
    • A test circuit for measurement of clocked storage element characteristics
    • Aug.
    • N. Nedovic, W. W. Walker, and V. G. Oklobdzija, "A test circuit for measurement of clocked storage element characteristics," IEEE J. Solid-State Circuits, vol. 39, no. 8, pp. 1294-1304, Aug. 2004.
    • (2004) IEEE J. Solid-State Circuits , vol.39 , Issue.8 , pp. 1294-1304
    • Nedovic, N.1    Walker, W.W.2    Oklobdzija, V.G.3
  • 36
    • 70350059666 scopus 로고    scopus 로고
    • Analysis of threshold voltage distribution due to random dopants: A 100 000-sample 3-D simulation study
    • D. Reid, C. Millar, G. Roy, S. Roy, and A. Asenov, "Analysis of threshold voltage distribution due to random dopants: A 100 000-sample 3-D simulation study," IEEE Trans. Electron Devices, vol. 56, no. 10, pp. 2255-2263, 2009.
    • (2009) IEEE Trans. Electron Devices , vol.56 , Issue.10 , pp. 2255-2263
    • Reid, D.1    Millar, C.2    Roy, G.3    Roy, S.4    Asenov, A.5
  • 37
    • 55649122323 scopus 로고    scopus 로고
    • Analysis of read current and write trip voltage variability from a 1-MB SRAM test structure
    • Nov.
    • T. Fischer et al., "Analysis of read current and write trip voltage variability from a 1-MB SRAM test structure," IEEE Trans. Semicond. Manuf., vol. 21, no. 4, pp. 534-541, Nov. 2008.
    • (2008) IEEE Trans. Semicond. Manuf. , vol.21 , Issue.4 , pp. 534-541
    • Fischer, T.1
  • 40
    • 38949167307 scopus 로고    scopus 로고
    • A screening methodology for V#INF#M#/INF#IN drift in SRAM arrays with applications to sub-65 nm nodes
    • M. Ball et al., "A screening methodology for V#INF#M#/INF#IN drift in SRAM arrays with applications to sub-65 nm nodes," in IEEE Int. Electron Devices Meet. (IEDM 2006) Tech. Dig., pp. 1-4.
    • IEEE Int. Electron Devices Meet. (IEDM 2006) Tech. Dig. , pp. 1-4
    • Ball, M.1
  • 41
    • 56749136206 scopus 로고    scopus 로고
    • Accurate estimation of SRAM dynamic stability
    • Dec.
    • D. Khalil et al, "Accurate estimation of SRAM dynamic stability," IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 16, no. 12, pp. 1639-1647, Dec. 2008.
    • (2008) IEEE Trans. Very Large Scale Integr. (VLSI) Syst. , vol.16 , Issue.12 , pp. 1639-1647
    • Khalil Et Al, D.1
  • 46
    • 33750831908 scopus 로고    scopus 로고
    • Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability
    • San Jose, CA
    • Y. Tsukamoto et al., "Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability," in Proc. IEEE Int. Conf. Comput.-Aided Design (ICCAD'05), San Jose, CA, pp. 398-405.
    • Proc. IEEE Int. Conf. Comput.-Aided Design (ICCAD'05) , pp. 398-405
    • Tsukamoto, Y.1
  • 48
    • 34547208344 scopus 로고    scopus 로고
    • Mixture importance sampling and its application to the analysis of SRAM designs in the presence of rare failure events
    • DOI 10.1145/1146909.1146930, 2006 43rd ACM/IEEE Design Automation Conference, DAC'06
    • R. Kanj, R. Joshi, and S. Nassif, "Mixture importance sampling and its application to the analysis of SRAM designs in the presence of rare failure events," in Proc. Design Autom. Conf. (DAC), 2006, pp. 69-72. (Pubitemid 47113869)
    • (2006) Proceedings - Design Automation Conference , pp. 69-72
    • Kanj, R.1    Joshi, R.2    Nassif, S.3
  • 50
    • 56849134427 scopus 로고    scopus 로고
    • Statistical blockade: A novel method for very fast Monte Carlo simulation of rare circuit events, and its application
    • A. Singhee and R. Rutenbar, "Statistical blockade: A novel method for very fast Monte Carlo simulation of rare circuit events, and its application," in Proc. DATE 2007, pp. 1-6.
    • Proc. DATE 2007 , pp. 1-6
    • Singhee, A.1    Rutenbar, R.2
  • 51
    • 56849089624 scopus 로고    scopus 로고
    • Canary replica feedback for near-DRV standby VDD scaling in a 90 nm SRAM
    • San Jose, CA, Sep.
    • J. Wang and B. H. Calhoun, "Canary replica feedback for near-DRV standby VDD scaling in a 90 nm SRAM," in IEEE Custom Integr. Circuits Conf. (CICC), San Jose, CA, Sep. 2007.
    • (2007) IEEE Custom Integr. Circuits Conf. (CICC)
    • Wang, J.1    Calhoun, B.H.2
  • 52
    • 77957891380 scopus 로고    scopus 로고
    • Analysis of the relationship between random telegraph signal and negative bias temperature instability
    • Anaheim, CA, May 2-6
    • Y. Tsukamoto et al., "Analysis of the relationship between random telegraph signal and negative bias temperature instability," in Proc. IEEE Int. Rel. Phys. Symp., Anaheim, CA, May 2-6, 2010.
    • (2010) Proc. IEEE Int. Rel. Phys. Symp.
    • Tsukamoto, Y.1
  • 53
    • 33748329641 scopus 로고    scopus 로고
    • First-order incremental block-based statistical timing analysis
    • Oct.
    • C. Visweswariah et al., "First-order incremental block-based statistical timing analysis," IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 25, no. 10, pp. 2170-2180, Oct. 2006.
    • (2006) IEEE Trans. Comput.-Aided Design Integr. Circuits Syst. , vol.25 , Issue.10 , pp. 2170-2180
    • Visweswariah, C.1
  • 55
    • 34548854756 scopus 로고    scopus 로고
    • A distributed critical-path timing monitor for a 65 nm high-performance microprocessor
    • San Francisco, CA, Feb.
    • A. Drake et al., "A distributed critical-path timing monitor for a 65 nm high-performance microprocessor," in Proc. IEEE Int. Solid-State Circuits Conf. (ISSCC), San Francisco, CA, Feb. 2007, pp. 398-399.
    • (2007) Proc. IEEE Int. Solid-State Circuits Conf. (ISSCC) , pp. 398-399
    • Drake, A.1
  • 60
    • 4444377615 scopus 로고    scopus 로고
    • Standby power reduction using dynamic voltage scaling and canary flip-flop structures
    • Sep.
    • B. H. Calhoun and A. P. Chandrakasan, "Standby power reduction using dynamic voltage scaling and canary flip-flop structures," IEEE J. Solid-State Circuits, vol. 39, no. 9, pp. 1504-1511, Sep. 2004.
    • (2004) IEEE J. Solid-State Circuits , vol.39 , Issue.9 , pp. 1504-1511
    • Calhoun, B.H.1    Chandrakasan, A.P.2
  • 61
    • 70449359316 scopus 로고    scopus 로고
    • Physically justiable die-level modeling of spatial variation in view of systematic across wafer variability
    • Jun.
    • L. Cheng, P. Gupta, C. Spanos, K. Qian, and L. He, "Physically justiable die-level modeling of spatial variation in view of systematic across wafer variability," in Proc. Design Autom. Conf, Jun. 2009.
    • (2009) Proc. Design Autom. Conf
    • Cheng, L.1    Gupta, P.2    Spanos, C.3    Qian, K.4    He, L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.