메뉴 건너뛰기




Volumn 43, Issue 4, 2008, Pages 874-880

Silicon odometer: An on-chip reliability monitor for measuring frequency degradation of digital circuits

Author keywords

Aging; Degradation; Monitoring circuit; NBTI; Reliability

Indexed keywords

AGING OF MATERIALS; DEGRADATION; ELECTRIC FREQUENCY MEASUREMENT; RELIABILITY; SILICON;

EID: 41549122836     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2008.917502     Document Type: Conference Paper
Times cited : (190)

References (17)
  • 1
    • 84932126501 scopus 로고    scopus 로고
    • Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in pMOS transistors
    • Apr
    • V. Huard and M. Denais, "Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in pMOS transistors," in Proc. IEEE Int. Reliabil. Phys. Symp., Apr. 2004, pp. 40-45.
    • (2004) Proc. IEEE Int. Reliabil. Phys. Symp , pp. 40-45
    • Huard, V.1    Denais, M.2
  • 2
    • 33751430964 scopus 로고    scopus 로고
    • New perspectives on NBTI in advanced technologies: Modeling and characterization
    • Sep
    • M. Denais et al., "New perspectives on NBTI in advanced technologies: Modeling and characterization," in Proc. IEEE Eur: Solid-State Device Res. Conf., Sep. 2005, pp. 399-402.
    • (2005) Proc. IEEE Eur: Solid-State Device Res. Conf , pp. 399-402
    • Denais, M.1
  • 3
    • 34347269880 scopus 로고    scopus 로고
    • Modeling and minimization of pMOS NBTI effect for robust nanometer design
    • Jul
    • R. Vattikonda, W. Wang, and Y. Cao, "Modeling and minimization of pMOS NBTI effect for robust nanometer design," in Proc. IEEE Design Autom. Conf., Jul. 2006, pp. 1047-1052.
    • (2006) Proc. IEEE Design Autom. Conf , pp. 1047-1052
    • Vattikonda, R.1    Wang, W.2    Cao, Y.3
  • 4
    • 84955243454 scopus 로고    scopus 로고
    • Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors
    • Apr
    • M. Ershov et al., "Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors," in Proc. IEEE Int. Reliabil. Phys. Symp., Apr. 2003, pp. 606-607.
    • (2003) Proc. IEEE Int. Reliabil. Phys. Symp , pp. 606-607
    • Ershov, M.1
  • 5
    • 36949022867 scopus 로고    scopus 로고
    • An on-chip NBTI sensor for measuring pMOS threshold voltage degradation
    • Aug
    • J. Keane, T. Kim, and C. H. Kim, "An on-chip NBTI sensor for measuring pMOS threshold voltage degradation," in Proc. IEEE Int. Symp. Low Power Electron. Design, Aug. 2007, pp. 189-194.
    • (2007) Proc. IEEE Int. Symp. Low Power Electron. Design , pp. 189-194
    • Keane, J.1    Kim, T.2    Kim, C.H.3
  • 6
    • 27644455005 scopus 로고    scopus 로고
    • A new method for precise evaluation of dynamic recovery of negative bias temperature instability
    • Apr
    • S. Aota et al., "A new method for precise evaluation of dynamic recovery of negative bias temperature instability," in Proc. IEEE Int. Conf. Microelectmn. Test Structures, Apr. 2005, pp. 197-199.
    • (2005) Proc. IEEE Int. Conf. Microelectmn. Test Structures , pp. 197-199
    • Aota, S.1
  • 7
    • 34548746636 scopus 로고    scopus 로고
    • On the impact of the NBTI recovery phenomenon on lifetime prediction of modern p-MOSFETs
    • Oct
    • C. Schlunder et al., "On the impact of the NBTI recovery phenomenon on lifetime prediction of modern p-MOSFETs," in Proc. IEEE Int. Integr: Reliabil Workshop, Oct. 2006, pp. 1-4.
    • (2006) Proc. IEEE Int. Integr: Reliabil Workshop , pp. 1-4
    • Schlunder, C.1
  • 8
    • 20944450469 scopus 로고    scopus 로고
    • Statistical mechanics based model for negative bias temperature instability
    • S. Zafar, "Statistical mechanics based model for negative bias temperature instability," J. Appl Phys., vol. 97, no. 10, pp. 1-9, 2005.
    • (2005) J. Appl Phys , vol.97 , Issue.10 , pp. 1-9
    • Zafar, S.1
  • 9
    • 84949193854 scopus 로고    scopus 로고
    • Impact of negative bias temperature instability on digital circuit reliability
    • V. Reddy et al., "Impact of negative bias temperature instability on digital circuit reliability," in Proc. IEEE Int. Reliabil. Phys. Symp., 2002, pp. 248-254.
    • (2002) Proc. IEEE Int. Reliabil. Phys. Symp , pp. 248-254
    • Reddy, V.1
  • 10
    • 41549092671 scopus 로고    scopus 로고
    • S. Rangan, N. Mielke, and E. Yeh, Universal recovery behavior of negative bias temperature instability, in Proc. IEEE Int. Electron Devices Meet., 2003, pp. 14.3.1-14.3.4.
    • S. Rangan, N. Mielke, and E. Yeh, "Universal recovery behavior of negative bias temperature instability," in Proc. IEEE Int. Electron Devices Meet., 2003, pp. 14.3.1-14.3.4.
  • 11
    • 33645470424 scopus 로고    scopus 로고
    • Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device lifetime and circuit application
    • Jun
    • T. Yang et al., "Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device lifetime and circuit application," in Proc. IEEE Symp. VLSI Technol., Jun. 2005, pp. 92-93.
    • (2005) Proc. IEEE Symp. VLSI Technol , pp. 92-93
    • Yang, T.1
  • 12
    • 0037005587 scopus 로고    scopus 로고
    • Dynamic NBTI of p-MOS transistors and its impact on device lifetime
    • Dec
    • G. Chen et al., "Dynamic NBTI of p-MOS transistors and its impact on device lifetime," IEEE Electron Device Lett., vol. 23, no. 12, pp. 734-736, Dec. 2002.
    • (2002) IEEE Electron Device Lett , vol.23 , Issue.12 , pp. 734-736
    • Chen, G.1
  • 13
    • 21644455928 scopus 로고    scopus 로고
    • On-the-fly characterization of NBTI in ultrathin gate oxide PMOSFET's
    • Dec
    • M. Denais et al., "On-the-fly characterization of NBTI in ultrathin gate oxide PMOSFET's," in Proc. IEEE Int. Electron Devices Meet., Dec. 2004, pp. 109-112.
    • (2004) Proc. IEEE Int. Electron Devices Meet , pp. 109-112
    • Denais, M.1
  • 14
    • 36949017858 scopus 로고    scopus 로고
    • Silicon odometer: An on-chip reliability monitor for measuring frequency degradation of digital circuits
    • Jun
    • T. Kim, J. Liu, R. Persaud, and C. H. Kim., "Silicon odometer: An on-chip reliability monitor for measuring frequency degradation of digital circuits," in Proc. IEEE Symp. VLSI Circuits, Jun. 2007, pp. 122-123.
    • (2007) Proc. IEEE Symp. VLSI Circuits , pp. 122-123
    • Kim, T.1    Liu, J.2    Persaud, R.3    Kim, C.H.4
  • 15
    • 46049120673 scopus 로고    scopus 로고
    • AC NBTI studied in the 1 Hz - 2 GHz range on dedicated on-chip circuits
    • Dec
    • R. Fernández et al., "AC NBTI studied in the 1 Hz - 2 GHz range on dedicated on-chip circuits," in Proc. IEEE Int. Electmn Devices Meet., Dec. 2006, pp. 337-340.
    • (2006) Proc. IEEE Int. Electmn Devices Meet , pp. 337-340
    • Fernández, R.1
  • 16
    • 34250769453 scopus 로고    scopus 로고
    • Paradigm shift for NBTI characterization in ultrascaled CMOS technologies
    • Mar
    • M. Denais et al., "Paradigm shift for NBTI characterization in ultrascaled CMOS technologies," in Proc. IEEE Int. Reliabil. Phys. Symp., Mar. 2006, pp. 735-736.
    • (2006) Proc. IEEE Int. Reliabil. Phys. Symp , pp. 735-736
    • Denais, M.1
  • 17
    • 0017493207 scopus 로고
    • Negative bias of MOS devices at high electric fields and degradation of MNOS devices
    • K. O. Jeppson and C. M. Svensson, "Negative bias of MOS devices at high electric fields and degradation of MNOS devices," J. Appl. Phys., vol. 48, no. 5, pp. 2004-2014, 1977.
    • (1977) J. Appl. Phys , vol.48 , Issue.5 , pp. 2004-2014
    • Jeppson, K.O.1    Svensson, C.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.