Monte Carlo modeling of threshold variation due to dopant fluctuations

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 1999, Pages 171-172

  Frank, David J ^a   Taur, Yuan ^a   Ieong, Meikei ^a   Wong, Hon Sum P ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; FINITE ELEMENT METHOD; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

DOPANT FLUCTUATION EFFECTS; MOSFET DESIGN; SOURCE DRAIN JUNCTIONS; THRESHOLD VOLTAGE VARIATION;

MOSFET DEVICES;

EID: 0033280507     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)