Time dependent Vccmin degradation of SRAM fabricated with high-k gate dielectrics

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 439-444

  Lin, J C ^a   Oates, A S ^a   Yu, C H ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FABRICATION; MAGNETIC SUSCEPTIBILITY; PROBLEM SOLVING; STATIC RANDOM ACCESS STORAGE;

HIGH-K GATE DIELECTRICS; STABILITY PROBLEMS; TIME DEPENDENCY;

GATE DIELECTRICS;

EID: 34548727432     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369930     Document Type: Conference Paper

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