Parameter-specific ring oscillator for process monitoring at the 45 nm node

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2010, Pages

  Wang, L T N ^a   Xu, N ^a   Toh, S O ^a   Neureuther, A R ^a   King Liu, T J ^a   Nikolic, B ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

45NM NODE; CONTACT ETCH STOP LAYERS; FOCUS VARIATION; FREQUENCY CHANGES; GATE LITHOGRAPHY; OVERLAY ERRORS; RING OSCILLATOR; SHALLOW TRENCH ISOLATION; SOURCES OF VARIATION; SPEED-UPS;

INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS; NITRIDES; OSCILLATORS (ELECTRONIC); PROCESS MONITORING;

SEMICONDUCTING SILICON;

EID: 78649892544     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2010.5617624     Document Type: Conference Paper

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9. L.-T. Pang, UC Berkeley PhD Thesis 2008