On the role of Ti adlayers for resistive switching in HfO2 -based metal-insulator-metal structures: Top versus bottom electrode integration

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

  Walczyk, Ch ^a   Wenger, Ch ^a   Walczyk, D ^a   Lukosius, M ^a   Costina, I ^a   Fraschke, M ^a   Dabrowski, J ^a   Fox, A ^a   Wolansky, D ^a   Thiess, S ^b   Miranda, E ^c   Tillack, B ^a,d   Schroeder, T ^a  

^a IHP   (Germany)

^b DESY   (Germany)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; BISMUTH COMPOUNDS; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTOR INSULATOR BOUNDARIES; SWITCHING; TIN OXIDES; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CYCLING ENDURANCE; DEVICE PERFORMANCE; INTERFACE CHEMISTRY; METAL-INSULATOR-METAL STRUCTURES; NON-STOICHIOMETRIC; NON-VOLATILE MEMORY APPLICATION; RESISTIVE SWITCHING;

TITANIUM METALLOGRAPHY;

EID: 79551621880     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3536524     Document Type: Conference Paper

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