Influence of the electrode material on Hf O2 metal-insulator-metal capacitors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 286-289

  Wenger, Ch ^a   Lukosius, M ^a   Mussig H J ^a   Ruhl, G ^b   Pasko, S ^c   Lohe, Ch ^c  

^a IHP   (Germany)

^b Infineon   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTROCHEMICAL ELECTRODES; HAFNIUM; HAFNIUM COMPOUNDS; IMPACT STRENGTH; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; TANNING; TANTALUM COMPOUNDS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

ATOMIC VAPORS; BOTTOM ELECTRODES; BREAKDOWN STRENGTHS; CAPACITANCE DENSITIES; CAPACITANCE VOLTAGES; ELECTRICAL PERFORMANCE; ELECTRODE MATERIALS; HIGH - K DIELECTRICS; INTERFACIAL LAYERS; LEAKAGE CURRENT DENSITIES; METAL INSULATOR METALS; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS;

ELECTROLYTIC CAPACITORS;

EID: 59949087589     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3071843     Document Type: Article

References (17)

1. International Roadmap for Semiconductors Update, Semiconductor Industry Association, 2007.
2. K. C. Chiang, C. C. Huang, A. Chin, W. J. Chen, H. L. Kao, M. Hong, and J. Kwo, VLSI Tech. Dig. 2006, 126.
3. F. El Kamel, P. Gonon, and C. Vallee, Appl. Phys. Lett. 91, 172909 (2007).
4. P. Gonon and C. Vallee, Appl. Phys. Lett. 90, 142906 (2007).
5. Ch. Wenger, G. Lupina, M. Lukosius, O. Seifarth, H.-J. Müssig, S. Pasko, and Ch. Lohe, J. Appl. Phys. 103, 104103 (2008).
6. Y. M. Shkel and D. J. Klingenberg, J. Appl. Phys. 80, 4566 (1996).
7. C. Ernsberger, J. Nickerson, T. Smith, A. E. Miller, and D. Banks, J. Vac. Sci. Technol. A 4, 2784 (1986).
8. D. P. Brady, F. N. Fuss, and D. Gerstenberg, Thin Solid Films 66, 287 (1980).
9. M. Wittmer, J. Noser, and H. Melchior, J. Appl. Phys. 52, 6659 (1981).
10. H. G. Tompkins, J. Appl. Phys. 70, 3876 (1991).
11. A. O. Ibidunni, Oxid. Met. 40, 5 (1993).
12. F. Esaka, K. Furuya, H. Shimada, M. Imamura, N. Matsubayashi, H. Sato, A. Nishijima, A. Kawana, H. Ichimura, and T. Kikuchi, J. Vac. Sci. Technol. A 15, 2521 (1997).
13. T. Schroeder, G. Lupina, R. Sohal, G. Lippert, Ch. Wenger, O. Seifarth, M. Tallarida, and D. Schmeisser, J. Appl. Phys. 102, 014103 (2007).
14. X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 233106 (2002).
15. The Modern Theory of Solids, edited by, Frederick Seitz, (Dover, New York, 1987).
16. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 2001).
17. A. K. Jonscher, J. Phys. D: Appl. Phys. 32, R57 (1999).