Enhanced bipolar resistive switching of HfO2 with a Ti interlayer

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 997-1001

  Lee, DooSung ^a   Sung, YongHun ^a   Lee, InGun ^a   Kim, JongGi ^a   Sohn, Hyunchul ^a   Ko, Dae Hong ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; FILTERED IMAGES; IN-SITU; MEMORY WINDOW; RESISTIVE SWITCHING;

COMPOSITE FILMS; DURABILITY; PLATINUM ALLOYS; SWITCHING SYSTEMS;

HAFNIUM OXIDES;

EID: 79958072102     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6312-5     Document Type: Article

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