Bias temperature instability of binary oxide based reram

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 964-965

  Fang, Z ^a   Yu, H Y ^a   Liu, W J ^a   Pey, K L ^a   Li, X ^a   Wu, L ^a   Wang, Z R ^a   Lo, Patrick G Q ^b   Gao, B ^c   Kang, J F ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c PEKING UNIVERSITY   (China)

Author keywords

Bias temperature instability; Resistance random access memory

Indexed keywords

BIAS TEMPERATURE INSTABILITY; BINARY OXIDES; ELECTRICAL STRESS; HIGH-RESISTANCE STATE; ION MOBILITY; MULTI-LEVEL; ON/OFF RATIO; OXYGEN IONS; POTENTIAL BARRIERS; RESET VOLTAGE; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY; ROOM TEMPERATURE; SWITCHING BEHAVIORS; TEMPERATURE IMPACT; TEMPERATURE INCREASE;

IMPACT RESISTANCE; NONVOLATILE STORAGE; OXYGEN; PLATINUM; RANDOM ACCESS STORAGE; STABILITY;

OXYGEN VACANCIES;

EID: 77957911084     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488697     Document Type: Conference Paper

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