Fractal dimension of conducting paths in nickel oxide (NiO) thin films during resistance switching

IEEE Transactions on Nanotechnology

Volumn 9, Issue 2, 2010, Pages 131-133

  Yoo, In Kyeong ^a   Kang, Bo Soo ^b   Ahn, Seung Eon ^a   Lee, Chang Bum ^a   Lee, Myoung Jae ^a   Park, Gyeong Su ^a   Li, Xiang Shu ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Nickel oxide; Resistance switching; Soft breakdown; Switching power

Indexed keywords

CONDUCTING PATHS; ELECTRICAL SWITCHING; ELECTRODE AREAS; NICKEL OXIDE THIN FILMS; PERCOLATING NETWORKS; RESET CURRENTS; RESISTANCE SWITCHING; SOFT BREAKDOWN; SWITCHING MODEL; SWITCHING POWER;

CONDUCTIVE FILMS; FRACTAL DIMENSION; NICKEL; NICKEL ALLOYS; NICKEL OXIDE; OXIDE FILMS; PARTIAL DISCHARGES; POISSON DISTRIBUTION; THIN FILMS;

SWITCHING;

EID: 77949357405     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2041670     Document Type: Article

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