Selective etching of high-k dielectric HfO2 films over Si in BCl3-containing plasmas without rf biasing

Applied Physics Express

Volumn 2, Issue 1, 2009, Pages 0165031-0165033

  Nakamura, Keisuke ^a   Hamada, Daisuke ^a   Ueda, Yoshinori ^a   Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLOTRONS; ETCHING; HAFNIUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PLASMAS; SILICON;

ELECTRON CYCLOTRONS; ETCHING MECHANISMS; SELECTIVE ETCHING; X RAY PHOTOELECTRON SPECTROSCOPY (XPS);

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 58449084643     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.016503     Document Type: Article

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