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Advanced Materials

Volumn 23, Issue 15, 2011, Pages 1730-1733

Coexistence of memristance and negative differential resistance in a nanoscale metal-oxide-metal system

(5) Pickett, Matthew D a Borghetti, Julien a Yang, J Joshua a Medeiros Ribeiro, Gilberto a Williams, R Stanley a

a HEWLETT PACKARD LABORATORIES (United States)

Author keywords

electronic properties; memristance; metal insulator transition; phase transformation

Indexed keywords

ANALYTICAL MODEL; MEMRISTANCE; METAL SYSTEMS; NANO DEVICE; NANO SCALE; NANOSCALE METALS; NEGATIVE DIFFERENTIAL RESISTANCES; PHASE TRANSFORMATION; VOLTAGE CONTROLLED OSCILLATOR;

ELECTRONIC PROPERTIES; MATHEMATICAL MODELS; METAL INSULATOR BOUNDARIES; METALS; NANOSTRUCTURED MATERIALS; NEGATIVE RESISTANCE; OSCILLATORS (ELECTRONIC); OXYGEN; OXYGEN VACANCIES; SEMICONDUCTOR INSULATOR BOUNDARIES;

METAL INSULATOR TRANSITION;

HEAVY METAL; NANOMATERIAL; OXIDE;

ARTICLE; CHEMISTRY; THERMODYNAMICS;

METALS, HEAVY; NANOSTRUCTURES; OXIDES; THERMODYNAMICS;

EID: 79954464722 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201004497 Document Type: Article

Times cited : (111)

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