Intrinsic constrains on thermally-assisted memristive switching

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 851-855

  Strukov, Dmitri B ^a   Williams, R Stanley ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL FORMULAS; CONSTANT TEMPERATURE; EFFECTIVE THERMAL RESISTANCE; FAVORABLE CONDITIONS; METALLIC CYLINDERS; PERFORMANCE TRADE-OFF; THERMALLY DRIVEN;

EID: 79959343817     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6269-4     Document Type: Article

References (28)

1. M. Abramowitz, I.A. Stegun, Handbook of Mathematical Functions: with Formulas, Graphs, and Mathematical Tables (Dover, New York, 1965).
2. J. Borghetti, D.B. Strukov, M. Pickett, J. Yang, R.S. Williams, Electrical transport and thermometry of electroformed titanium dioxide memristive switches. J. Appl. Phys. 106, 124504 (2009).
3. S.H. Chang, S.C. Chae, S.B. Lee, C. Liu, T.W. Noh, J.S. Lee, B. Kahng, J.H. Jang, M.Y. Kim, D.-W. Kim, C.U. Jung, Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors. Appl. Phys. Lett. 92, 183507 (2008).
4. Y.C. Chen, C.T. Rettner, S. Raoux, G.W. Burr, S.H. Chen, R.M. Shelby, M. Salinga, W.P. Risk, T.D. Happ, G.M. McClelland, M. Breitwischt, A. Schrott, J.B. Philipps, M.H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C.F. Chen, E. Joseph, S. Zaidi, B. Yee, H.L. Lung, R. Bergmann, C. Lam, Ultra-thin phase-change bridge memory device using GeSb, in Proc. International Electron Devices Meeting, San Francisco, CA, December 2006, art. 4154329 (2006).
5. L.O. Chua, S.M. Kang, Memristive devices and systems. Proc. IEEE 64, 209-223 (1976).
6. COMSOL software. Available online at http://www.comsol.com.
7. G. Dearnaley, A.M. Stoneham, D.V. Morgan, Electrical phenomena in amorphous oxide films. Rep. Prog. Phys. 33, 1129-1192 (1970).
8. 11 bits per square centimetre. Nature 445, 414-417 (2007). (Pubitemid 46160906)
9. M.T. Hickmott, Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys. 33, 2669-2682 (1962).
10. S.H. Jo, K.-H. Kim, W. Lu, High-density crossbar arrays based on a Si memristive system. Nano Lett. 9, 870-874 (2009).
11. S.F. Karg, G.I. Meijer, J.G. Bednorz, C.T. Rettner, A.G. Schrott, E.A. Joseph, C.H. Lam, M. Janousch, U. Staub, F. La Mattina, S.F. Alvarado, D. Widmer, R. Stutz, U. Drechsler, D. Caimi, Transition-metal oxide-based resistance change memories. IBM J. Res. Dev. 52(4/5), 481-492 (2008).
12. C. Kittel, Introduction to Solid State Physics, 7th edn. (Wiley, New York, 1995).
13. M.-J. Lee, C.B. Lee, S. Kim, H. Yin, J. Park, S.E. Ahn, B.S. Kang, K.H. Kim, G. Stefanovich, I. Song, J.H. Lee, S.W. Kim, S.J. Chung, Y.H. Kim, C.S. Lee, J.B. Park, I.G. Baek, C.J. Kim, Y. Park, Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates, in Proc. International Electron Devices Meeting, San Francisco, CA, December 2008, art. 4796620 (2008).
14. K. Likharev, A. Mayr, I. Muckra, Ö. Türel, CrossNets: high-performance neuromorphic architectures for CMOL circuits. Ann. N.Y. Acad. Sci. 1006, 146-163 (2003). (Pubitemid 38064782)
15. K.K. Likharev, CMOL technology: devices, circuits, and architectures. J. Nanoelectron. Optoelectron. 3, 203-230 (2008).
16. T. Mikolajick, M. Salinga, M. Kund, T. Kever, Nonvolatile memory concepts based on resistive switching in inorganic materials. Adv. Mater. 11(4), 235-240 (2009).
17. H. Pagnia, N. Sotnik, Bistable switching in electroformed metalinsulator- metal devices. Phys. Status Solidi A 108(11), 11-65 (1988). (Pubitemid 18664267)
18. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, S. Spigat, C. Wiemert, M. Peregot, M. Fanciulli, Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM, in Proc. International Electron Devices Meeting, Baltimore MD, December 2007, pp. 775-778, art. 4419062 (2007).
19. U. Russo, D. Ielmini, A. Redaelli, A.L. Lacaita, Modeling of programming and read performance in phase-change memories-part I: cell optimization and scaling. IEEE Trans. Electron Devices 55(2), 506-514 (2008). (Pubitemid 351292038)
20. G.S. Snider, R.S. Williams, Nano/CMOS architectures using a field-programmable nanowire interconnect. Nanotechnology 18, 035204 (2007).
21. D.B. Strukov, K.K. Likharev, Defect-tolerant architectures for nanoelectronic crossbar memories. J. Nanosci. Nanotechnol. 7, 151- 167 (2007).
22. D.B. Strukov, K.K. Likharev, Reconfigurable hybrid CMOS/nanodevice circuits for image processing. IEEE Trans. Nanotechnol. 6, 696-710 (2007).
23. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S.Williams, The missing memristor found. Nature 453, 80-83 (2008). (Pubitemid 351630336)
24. D.B. Strukov, J.L. Borghetti, R.S. Williams, Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. Small 5(9), 1058-1063 (2009).
25. D.B. Strukov, R.S. Williams, Exponential ionic drift: fast switching and low volatility of thin filmmemristors. Appl. Phys. A 94(3), 515-519 (2009).
26. R. Waser, M. Aono, Nanoionics-based resistive switching memories. Nat. Mater. 6, 833-840 (2007). (Pubitemid 350064191)
27. M. Wuttig, N. Yamada, Phase-change materials for rewriteable data storage. Nat. Mater. 6, 824-832 (2007). (Pubitemid 350050578)
28. V.V. Zhirnov, R.K. Cavin, S. Menzel, E. Linn, S. Schmelzer, D. Brauhaus, C. Schindler, R. Waser, Memory devices: energyspace-time tradeoffs. Proc. IEEE 98(12), 2185-2200 (2010).