Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Solid-State Electronics

Volumn 54, Issue 9, 2010, Pages 841-848

  Pantelides, Sokrates T ^a,b,c   Tsetseris, L ^a,d   Beck, M J ^a   Rashkeev, S N ^a,e   Hadjisavvas, G ^a   Batyrev, I G ^a   Tuttle, B R ^a,f   Marinopoulos, A G ^a   Zhou, X J ^b   Fleetwood, D M ^a,b   Schrimpf, R D ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^e IDAHO NATIONAL LABORATORY   (United States)

^f BEHREND COLLEGE   (United States)

Author keywords

Aging; Displacement damage; ELDRS; Hydrogen; Mobilities; MOSFET; NBTI; Radiation effects; Reliability

Indexed keywords

ATOMIC SCALE; ATOMIC-SCALE MODEL; ATOMIC-SCALE SIMULATIONS; BAND GAPS; DISPLACEMENT DAMAGES; DOPANT DEACTIVATION; ELDRS; ENERGETIC ION; ENERGY LEVEL; HYDROGEN MOBILITY; INDUCED MOBILITY; LEVEL MODEL; LOW DOSE RADIATION; MOS-FET; NEGATIVE BIAS TEMPERATURE INSTABILITY; PHYSICAL MECHANISM; QUANTUM-MECHANICAL CALCULATION; SINGLE-EVENT GATE RUPTURE;

ATOMS; DISPENSERS; ELECTRON MOBILITY; HYDROGEN; MICROELECTRONICS; MODELS; MOSFET DEVICES; QUALITY ASSURANCE; QUANTUM THEORY; RELIABILITY; SILICON COMPOUNDS;

RADIATION EFFECTS;

EID: 77954218607     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.04.041     Document Type: Conference Paper

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