Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power mosfets

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2492-2499

  Titus, J L ^a,b   Whealley, C F ^c,d   Van Tyne, K M ^e   Krieg, F ^a,b,c   Burton, D I ^e   Campbell, A B ^d,e  

^a IEEE   (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

^c Box 1120 ^*  (United States)

^d INTERSIL CORPORATION   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ENERGY TRANSFER; GOLD; ION BEAMS; ION BOMBARDMENT; NIOBIUM; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS;

ATOMIC NUMBERS; ION ENERGY; LINEAR ENERGY TRANSFER (LET); SINGLE-EVENT GATE RUPTURE (SEGR);

MOSFET DEVICES;

EID: 0032313886     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736490     Document Type: Article

References (21)

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