New experimental findings for single-event gate rupture in MOS capacitors and linear devices

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3263-3269

  Lum, Gary K ^a   Boruta, Nicholas ^a   Baker, J M ^a   Robinette, L ^a   Shaneyfelt, M R ^b   Schwank, J R ^b   Dodd, P E ^b   Felix, J A ^b  

^a LOCKHEED MARTIN SPACE SYSTEMS COMPANY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Catastrophic gate oxide failure; Dielectric gate rupture; Linear devices; Single event gate rupture (SEGR)

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT DISTRIBUTION; GATES (TRANSISTOR); INTEGRATED CIRCUITS; MOSFET DEVICES; PLASMA DEVICES; STATIC RANDOM ACCESS STORAGE;

CATASTROPHIC GATE OXIDE FAILURE; DIELECTRIC GATE RUPTURE; LINEAR ENERGY TRANSFER (LET); SINGLE-EVENT GATE RUPTURE (SEGR);

MOS CAPACITORS;

EID: 11044225191     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.840262     Document Type: Conference Paper

References (10)

1. T. F. Wrobel, "On heavy ion induced hard-errors in dielectric structures," IEEE Trans. Nucl. Sci., vol. NS-34, pp. 1262-1268, Dec. 1987.
2. F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, G. L. Hash, L. P. Schanwald, R. A. Loemker, K. S. Krisch, M. L. Green, B. E. Weir, and P. J. Silverman, "Precursor ion damage and angular dependence of single event gate rupture in thin oxides," IEEE Trans. Nucl. Sci., vol. 45, pp. 2509-2518, Dec. 1998.
3. N. Boruta, G. K. Lum, H. O'Donnell, L. Robinette, M. R. Shaneyfelt, and J. R. Schwank, "A new physics-based model for understanding single event gate rupture in linear devices," IEEE Trans. Nucl. Sci., vol. 48, pp. 1917-1924, Aug. 2001.
4. J. L. Titus, C. F. Wheatley, M. Allenspach, R. D. Schrimpf, D. I. Burton, J. R. Brews, K. F. Galloway, and R. L. Pease, "Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, pp. 2938-2943, Dec. 1996.
5. G. K. Lum, H. O'Donnell, and N. Boruta, "The impact of single event gate rupture in linear devices," IEEE Trans. Nucl. Sci., vol. 47, pp. 2373-2379, Dec. 2000.
6. W. J. Stapor et al., "Charge collection in silicon for ions of different energy but same linear energy transfer," IEEE Trans. Nucl. Sci., vol. 35, pp. 1585-1590, Dec. 1988.
7. P. E. Dodd, O. Musseau, M. R. Shaneyfelt, F. W. Sexton, C. D'hose, G. L. Hash, M. Martinez, R. A. Loemker, J.-L. Leray, and P. S. Winokur, "Impact of ion energy on single-event upset," IEEE Trans. Nucl. Sci., vol. 45, pp. 2483-2491, Dec. 1998.
8. M. Allenspach, I. Mouret, J. L. Titus, C. F. Wheatley, R. L. Pease, J. R. Brews, R. D. Schrimpf, and K. F. Galloway, "Single-event gate-rupture in power mosfets: Prediction of breakdown biases and evaluation of oxide thickness dependence," IEEE Trans. Nucl. Sci., vol. 42, pp. 1922-1927, Dec. 1995.
9. A. Candelori, M. Ceschia, A. Paccagnella, J. Wyss, D. Bisello, and G. Ghidini, "Thin oxide degradation after high-energy ion irradiation," IEEE Trans. Nucl. Sci., vol. 48, pp. 1735-1743, Oct. 2001.
10. J. R. Schwank, P. E. Dodd, M. R. Shaneyfelt, G. Vizkelethy, B. L. Draper, T. A. Hill, D. S. Walsh, G. L. Hash, B. L. Doyle, and F. D. McDaniel, "Charge collection in SOI capacitors and circuits and its effect on SEU hardness," IEEE Trans. Nucl. Sci., vol. 49, pp. 2937-2947, Dec. 2002.