Positive biastemperature instability in MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 116-124

  Zhang, J F ^a   Eccleston, W ^a  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; INTERFACES (MATERIALS); SEMICONDUCTING BORON; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI);

MOSFET DEVICES;

EID: 0031675869     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658821     Document Type: Article

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