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Applied Physics Letters

Volumn 83, Issue 22, 2003, Pages 4646-4648

Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field

(4) Rashkeev, S N a Fleetwood, D M a Schrimpf, R D b Pantelides, S T a,c

a VANDERBILT UNIVERSITY (United States)

b VANDERBILT UNIVERSITY (United States)

c OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRIC FIELDS; ELECTRON IRRADIATION; INTERFACES (MATERIALS); MONTE CARLO METHODS; MOS CAPACITORS; POSITIVE IONS; PROTONS; SEMICONDUCTING BORON; SILICA;

DEACTIVATION PROCESS; DIRECT NEUTRALIZATION; SILICON BIPOLAR TRANSISTOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0348107237 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1630368 Document Type: Article

Times cited : (8)

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