Role of Si1 - XGex buffer layer on mobility enhancement in a strained-Si n-channel metal-oxide-semiconductor field-effect transistor

Applied Physics Letters

Volumn 75, Issue 19, 1999, Pages 2948-2950

  Sugii, Nobuyuki ^b   Nakagawa, Kiyokazu ^b   Yamaguchi, Shinya ^b   Miyao, Masanobu ^a,b  

^a KYUSHU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000151220     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125197     Document Type: Article

References (12)

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