Statistical Modeling of Radiation-Induced Proton Transport in Silicon: Deactivation of Dopant Acceptors in Bipolar Devices

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1896-1900

  Rashkeev, S N ^a   Fleetwood, D M ^a   Schrimpf, R D ^a   Pantelides, S T ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

Bipolar transistors; Monte Carlo methods; MOS capacitors; Passivation; Radiation effects

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); INTEGRATED CIRCUITS; INTERFACES (MATERIALS); IONIZING RADIATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; MOS CAPACITORS; PASSIVATION; PROTON IRRADIATION; RADIATION EFFECTS; SILICA; STATISTICAL METHODS;

BASE EMITTER JUNCTIONS; DOPANTS;

BIPOLAR TRANSISTORS;

EID: 1242287958     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.820751     Document Type: Conference Paper

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