Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1904-1912

  Massengill, L W ^a,b   Choi, B K ^a,b   Fleetwood, D M ^a,b   Schrimpf, R D ^a,b   Galloway, K F ^a,b   Shaneyfelt, M R ^a,c   Meisenheimer, T L ^a,c   Dodd, P E ^a,c   Schwank, J R ^a,c   Lee, Y M ^d   Johnson, R S ^e   Lucovsky, G ^a,e  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d North Carolina State University   (United States)

^e NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Dielectric breakdown; Dielectric reliability; Scaling; Single event radiation effects

Indexed keywords

DIELECTRIC BREAKDOWN; ULTRATHIN GATE OXIDES;

CAPACITANCE; HEAVY IONS; INTEGRATED CIRCUITS; RADIATION EFFECTS; SPACE APPLICATIONS;

DIELECTRIC MATERIALS;

EID: 0035721958     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983149     Document Type: Conference Paper

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