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Physical Review Letters

Volumn 100, Issue 18, 2008, Pages

Disorder-recrystallization effects in low-energy beam-solid interactions

(4) Beck, M J a Schrimpf, R D b Fleetwood, D M a,b Pantelides, S T a,c

a VANDERBILT UNIVERSITY (United States)

b VANDERBILT UNIVERSITY (United States)

c OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; DENSITY FUNCTIONAL THEORY; ION IMPLANTATION; KINETIC ENERGY; POINT DEFECTS; RECRYSTALLIZATION (METALLURGY);

ENERGY RECOILS; RECRYSTALLIZATION PROCESSES;

CRYSTALLINE MATERIALS;

EID: 43249090020 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.100.185502 Document Type: Article

Times cited : (21)

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