Implications of radiation-induced dopant deactivation for npn bipolar junction transistors

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2281-2288

  Witczak, Steven C ^a,b   Lacoe, Ronald C ^a,c   Shaneyfelt, Marty R ^a,b   Mayer, Donald C ^a,c   Schwank, James R ^a,b   Winokur, Peter S ^a,b  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR JUNCTION TRANSISTORS; INTERFACE TRAPS; NEUTRALIZATION; RADIATION INDUCED DOPANT DEACTIVATION;

BIPOLAR TRANSISTORS; CARRIER CONCENTRATION; CHEMICAL ACTIVATION; COMPUTER SIMULATION; DOSIMETRY; HIGH TEMPERATURE EFFECTS; HOLE TRAPS; HYDROGEN; INTERFACES (MATERIALS); IONS; IRRADIATION; MOS CAPACITORS;

IONIZING RADIATION;

EID: 0034450447     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903766     Document Type: Conference Paper

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