Migration, incorporation, and passivation reactions of molecular hydrogen at the Si-SiO2 interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 24, 2004, Pages 1-6

  Tsetseris, L ^a   Pantelides, S T ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SILICON;

ARTICLE; CHEMICAL BOND; CONFORMATIONAL TRANSITION; DEGRADATION KINETICS; DENSITY FUNCTIONAL THEORY; ENERGY; MIGRATION; MOLECULAR DYNAMICS; MOLECULAR INTERACTION; REACTION ANALYSIS; TEMPERATURE DEPENDENCE; THERMODYNAMICS;

EID: 14944357992     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.245320     Document Type: Article

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