A new physics-based model for understanding single-event gate rupture in linear devices

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1917-1924

  Boruta, Nicholas ^a,b   Lum, Gary K ^a,b   O'Donnell, Hugh ^a,b   Robinette, L ^b   Shaneyfelt, Marty R ^a,c   Schwank, Jim R ^a,c  

^a IEEE   (United States)

^b LOCKHEED MARTIN SPACE SYSTEMS COMPANY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Dielectric breakdown; Heavy ion; Linear devices; Oxide breakdown; Single event gate rupture (SEGR)

Indexed keywords

ANALOG DEVICES; DIELECTRIC BREAKDOWN; SINGLE-EVENT GATE RUPTURE (SEGR);

CAPACITORS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRONS; ELECTROSTATICS; HEAVY IONS; IMPACT IONIZATION; LINEAR INTEGRATED CIRCUITS; OXIDES; POISSON EQUATION;

NUCLEAR PHYSICS;

EID: 0035723155     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983151     Document Type: Conference Paper

References (13)

1. On heavy ion induced hard-errors in dielectric structures
2. An experimental survey of heavy ion induced dielectric rupture in actel field programmable gate arrays (FPGA's)
3. Impact of oxide thickness on SEGR failure in vertical power MOSFETs; Development of a semi-empirical expression
4. Precursor ion damage and angular dependence of single event gate rupture in thin oxides
5. Break-down of gate oxides during irradiation with heavy ions
6. Measurement of a cross-section for single-event gate rupture in power MOSFET's
7. Destructive failure of OP470/OP471 operational amplifiers due to breakdown of gate oxides during space radiation performance qualification
8. Recent radiation damage and single event effect results for microelectronics
9. The impact of single event gate rupture in linear devices
10. Formation of etchable tracks in dielectrics
11. Single-event gate rupture in vertical power MOSFETs: An original empirical expression
12. Single event gate rupture in thin gate oxides