A comprehensive model for PMOS NBTI degradation: Recent progress

Microelectronics Reliability

Volumn 47, Issue 6, 2007, Pages 853-862

  Alam, M A ^a   Kufluoglu, H ^a   Varghese, D ^a,b   Mahapatra, S ^b  

^a PURDUE UNIVERSITY   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; MOS DEVICES; RELIABILITY THEORY; THERMAL DIFFUSION; THERMODYNAMIC STABILITY;

NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); PHYSICAL MECHANISMS; PMOS TRANSISTORS; REACTION-DIFFUSION MODELS;

BIAS CURRENTS;

EID: 34247881985     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.10.012     Document Type: Article

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