The effects of aging on MOS irradiation and annealing response

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2642-2648

  Rodgers, M P ^a,b   Fleetwood, D M ^a,b   Schrimpf, R D ^a,b   Batyrev, I G ^c   Wang, S ^c   Pantelides, S T ^c  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

Aging effects; Hardness assurance; Interface traps; MOS devices; Semiconductor device radiation effects

Indexed keywords

AGING EFFECTS; HARDNESS ASSURANCE; INTERFACE TRAPS; SEMICONDUCTOR DEVICE RADIATION EFFECTS;

ACTIVATION ENERGY; ANNEALING; BIPOLAR SEMICONDUCTOR DEVICES; IRRADIATION; POLYSILICON; QUANTUM THEORY; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; THRESHOLD VOLTAGE; TRANSISTORS;

MOS DEVICES;

EID: 33144481131     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.861079     Document Type: Conference Paper

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