Hydrogen-related instabilities in MOS devices under bias temperature stress

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 4, 2007, Pages 502-508

  Tsetseris, Leonidas ^b,c   Zhou, Xing J ^a,d   Fleetwood, Daniel M ^a,d   Schrimpf, Ronald D ^a,d   Pantelides, Sokrates T ^a,c,e  

^a IEEE

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c VANDERBILT UNIVERSITY   (United States)

^d VANDERBILT UNIVERSITY   (United States)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Bias temperature instability (BTI); Device degradation; Enhanced low dose rate sensitivity (ELDRS); Hydrogen; Interface traps; MOS devices

Indexed keywords

ELECTRONIC EQUIPMENT; HYDROGEN; MOS DEVICES; SILICON COMPOUNDS;

BIAS-TEMPERATURE INSTABILITY (BTI); DEVICE DEGRADATION; INTERFACE TRAPS;

SYSTEM STABILITY;

EID: 37549009454     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.910438     Document Type: Article

References (58)

1. 2 interface defects," Appl. Phys. Lett., vol. 57, no. 2, pp. 162-164, Jul. 1990.
2. 2 with molecular hydrogen," Appl. Phys. Lett., vol. 68, no. 15, pp. 2076-2078, Apr. 1996.
3. P. M. Lenahan and P. V. Dressendorfer, "Hole traps and trivalent silicon centers in metal-oxide silicon devices," J. Appl. Phys., vol. 55, no. 10, pp. 3495-3499, 1984.
4. 2-Si interface trap centers," Appl. Phys. Lett., vol. 65, no. 3, pp. 330-332, Jul. 1994.
5. S. T. Pantelides, L. Tsetseris, S. N. Rashkeev, X. J. Zhou, D. M. Fleetwood, and R. D. Schrimpf, "Hydrogen in MOSFETs: A primary agent of reliability issues," Microelectron. Reliab., vol. 47, no. 6, pp. 903-911, Jun. 2007.
6. D. M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, R. D. Schrimpf, and S. T. Pantelides, "Effects of device aging on microelectronics radiation response and reliability," Microelectron. Reliab., vol. 47, no. 7, pp. 1075-1085, Jul. 2007.
7. D. M. Fleetwood, "Effects of hydrogen transport and reactions on microelectronics radiation response and reliability," Microelectron. Reliab., vol. 42, no. 4/5, pp. 523-541, Apr./May 2002.
8. W. O. Jeppson and C. M. Svensson, "Negative bias stress of MOS devices at high electric-fields and degradation of MNOS devices," J. Appl. Phys., vol. 48, no. 5, pp. 2004-2014, 1977.
9. 2 interface," Phys. Rev. B, vol. 51, no. 7, pp. 4218-4230, Feb. 1995.
10. D. K. Schroder and J. A. Babcock, "Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing," J. Appl. Phys., vol. 93, no. 1, pp. 1-18, Jul. 2003.
11. J. H. Stathis and S. Zafar, "The negative bias temperature instability in MOS devices: A review," Microelectron. Reliab., vol. 46, no. 2-4, pp. 270-286, Feb.-Apr. 2006.
12. D. K. Schroder, "Negative bias temperature instability: What do we understand?" Microelectron. Reliab., vol. 47, no. 6, pp. 841-852, Jun. 2007.
13. 2 gate dielectrics," Appl. Phys. Lett., vol. 84, no. 22, pp. 4394-4396, May 2004.
14. J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, "Direct observation of the structure of defect centers involved in the negative bias temperature instability," Appl. Phys. Lett., vol. 87, no. 20, 204106, Nov. 2005.
15. M. Houssa, V. V. Afanasaev, A. Stesmans, M. Aoulaiche, G. Groeseneken, and M. M. Heyns, "Insights on the physical mechanism behind negative bias temperature instabilities," Appl. Phys. Lett., vol. 90, no. 4, 043505, Jan. 2007.
16. 2 interface," Appl. Phys. Lett., vol. 85, no. 21, pp. 4950-4952, Nov. 2004.
17. 2 interface," Phys. Rev. B, vol. 70, no. 24, 245320, Dec. 2004.
18. L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T Pantelides, "Physical mechanisms of negative bias-temperature instability," Appl. Phys. Lett., vol. 86, no. 14, 142103, Apr. 2005.
19. 2 interface: Atomic-scale mechanisms and limitations," Appl. Phys. Lett., vol. 86, no. 11, 112107, Mar. 2005.
20. L."Tsetseris, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, and S. T. Pantelides, "Common origin for enhanced low dose-rate sensitivity and bias-temperature instability under negative bias," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2265-2271, Dec. 2005.
21. L. Tsetseris, S. W. Wang, and S. T. Pantelides, "Thermal donor formation processes in silicon and the catalytic role of hydrogen," Appl. Phys. Lett., vol. 88, no. 5, 051916, Jan. 2006.
22. L. Tsetseris and S. T. Pantelides, "Reactions of excess hydrogen at a Si(111) surface with H passivation," Phys. Rev. B, vol. 74, no. 11, 113301, Sep. 2006.
23. J. P. Perdew and Y. Wang, "Accurate and simple analytic representation of the electron-gas correlation-energy," Phys. Rev. B, vol. 45, no. 23, pp. 13 244-13 249, Jun. 1992.
24. G. Kresse and J. Furthmuller, "Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set," Phys. Rev. B, vol. 54, no. 16, pp. 11 169-11 186, Oct. 1996.
25. 2 interfaces and a possible origin of their contrasting properties," Phys. Rev. Lett., vol. 84, no. 5, pp. 943-946, Jan. 2000.
26. 2 interface," Phys. Rev. Lett., vol. 97, no. 11, 116101, Dec. 2006.
27. D. M. Fleetwood, X. J. Zhou, L. Tsetseris, S. T. Pantelides, and R. D. Schrimpf "Hydrogen model for negative-bias temperature instabilities in MOS gate insulators," in Proc. Silicon Nitride Silicon Dioxide Thin Insulating Films Other Emerging Dielectrics VIIIR. E. Sah, M. J. Deen, J. Zhang, J. Yota, and Y. Kamakura, Eds., 2005, pp. 267-278.
28. 2 interface," Phys. Rev. Lett., vol. 72, no. 17, pp. 2745-2748, Apr. 1994.
29. R. W. Lee, R. C. Frank, and D. E. Swets, "Diffusion of hydrogen and deuterium in fused quartz," J. Chem. Phys., vol. 15, no. 4, pp. 1062-1071, Feb. 1962.
30. 2 (4-6 nm)-Si interfaces during negative-bias temperature aging," J. Appl. Phys., vol. 77, no. 3, pp. 1137-1148, Feb. 1994.
31. S. S. Tan, T. P. Chen, C. H. Ang, and L. Chan, "Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition," Appl. Phys. Lett., vol. 82, no. 2, pp. 269-271, Jan. 2003.
32. b1 center," Phys. Rev. Lett., vol. 85, no. 13, pp. 2773-2776, Sep. 2000.
33. 2," Phys. Rev. Lett., vol. 97, no. 15, 155901, Oct. 2006.
34. P. J. H. Denteneer, C. van de Walle, and S. T. Pantelides, "Microscopic structure of the hydrogen-phosphorus complex in crystalline silicon," Phys. Rev. B, vol. 41, no. 6, pp. 3885-3888, Feb. 1990.
35. P. J. H. Denteneer, C. G. Van de Walle, and S. T. Pantelides, "Microscopic structure of the hydrogen-boron complex in crystalline silicon," Phys. Rev. B, vol. 39, no. 15, pp. 10 809-10 824, May 1989.
36. T. Zundel and J. Weber, "Dissociation energies of shallow-acceptor hydrogen pairs in silicon," Phys. Rev. B, vol. 39, no. 18, pp. 13 549-13 552, Jun. 1989.
37. J. Zhu, N. M. Johnson, and C. Herring, "Negative charge-state of hydrogen in silicon," Phys. Rev. B, vol. 41, no. 17, pp. 12 354-12 357, Jun. 1990.
38. N. M. Johnson and C. Herring, "Kinetics of minority-carrier enhanced dissociation of hydrogen-dopant complexes in semiconductors," Phys. Rev. B, vol. 46, no. 19, pp. 11 379-11 382, May 1992.
39. S. J. Pearton and J. Lopata, "Dissociation of P-H, As-H, and Sb-H complexes in silicon," Appl. Phys. Lett., vol. 59, no. 22, pp. 2841-2843, Nov. 1991.
40. C. H. Seager and R. A. Anderson, "Minority carrier-induced release of hydrogen from donors in silicon," Phys. Rev. B, vol. 52, no. 3, pp. 1708-1717, Jul. 1995.
41. N. M. Johnson and C. Herring, "Diffusion of negatively charged hydrogen in silicon," Phys. Rev. B, vol. 46, no. 23, pp. 15 554-15 557, Dec. 1992.
42. C. Herring, N. M. Johnson, and C. G. van de Walle, "Energy levels of isolated hydrogen levels in silicon," Phys. Rev. B, vol. 64, no. 27, 125209, Sep. 2001.
43. C. G. van de Walle, P. J. H. Denteneer, Y. Bar-Yam, and S. T. Pantelides, "Theory of hydrogen diffusion and reactions in crystalline silicon," Phys. Rev. B, vol. 39, no. 15, pp. 10 791-10 808, May 1989.
44. S. N. Volkos, E. S. Efthymiou, S. Bernardini, I. D. Hawkins, A. R. Peaker, and G. Petkos, "The impact of negative-bias-temperature instability on the carrier generation lifetime of metal-oxynitride-silicon capacitors," J. Appl. Phys., vol. 100, no. 12, 124103, Dec. 2006.
45. J. F. Zhang and W. Eccleston, "Positive bias temperature instability in MOSFETs," IEEE Trans. Electron Devices, vol. 45, no. 1, pp. 116-124, Jan. 1998.
46. C. E. Blat, E. H. Nicollian, and E. H. Poindexter, "Mechanism of negative-bias-temperature instability," J. Appl. Phys., vol. 69, no. 3, pp. 1712-1720, Feb. 1991.
47. C. H. Seager and R. A. Anderson, "Electronic control of hydrogen debonding from phosphorus in silicon," Solid State Commun., vol. 76, no. 3, pp. 285-288, Oct. 1990.
48. A. T. Krishnan, S. Chakravarti, P. Nicollian, V. Reddy, and S. Krishnan, "Negative bias temperature instability mechanism: The role of molecular hydrogen," Appl. Phys. Lett., vol. 88, no. 15, 153518, Apr. 2006.
49. H. Kufluoglou and M. A. Alam, "Theory of interface-trap-induced NBTI degradation for reduced cross section MOSFETs," IEEE Trans. Electron Devices, vol. 53, no. 5, pp. 1120-1130, May 2006.
50. S. Chakravarti, A. T. Krishnan, V. Reddy, and S. Krishnan, "Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation," Microelectron. Reliab., vol. 47, no. 6, pp. 863-872, Jun. 2007.
51. M. Houssa, M. Aoulaiche, S. De Gendt, G. Groeseneken, M. M. Heyns, and A. Stesmans, "Reaction-dispersive proton transport model for negative bias temperature instabilities," Appl. Phys. Lett., vol. 86, no. 11, 093506, Sep. 2005.
52. X. J. Zhou, D. M. Fleetwood, J. A. Felix, E. P. Gusev, and C. D'Emic, "Bias-temperature instabilities and radiation effects in MOS devices," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2231-2238, Dec. 2005.
53. 2 gate dielectrics," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3636-3643, Dec. 2006.
54. T. Busani, R. A. B. Devine, and H. L. Hughes, "Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators," Appl. Phys. Lett., vol. 90, no. 16, 163 512, Apr. 2007.
55. E. W. Enlow, R. L. Pease, W. E. Combs, R. D. Schrimpf, and R. N. Nowlin, "Response of advanced bipolar processes to ionizing radiation," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1342-1351, Dec. 1991.
56. R. L. Pease, L. M. Cohn, D. M. Fleetwood, M. A. Gehlhausen, T. L. Turflinger, D. B. Brown, and A. H. Johnston, "A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 1981-1988, Dec. 1997.
57. S. N. Rashkeev, C. R. Cirba, D. M. Fleetwood, R. D. Schrimpf, S. C. Witczak, A. Michez, and S. T. Pantelides, "Physical model for enhanced interface-trap formation at low dose rates," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2650-2655, Dec. 2002.
58. H. P. Hjalmarson, R. L. Pease, S. C. Witczak, M. R. Shaneyfelt, J. R. Schwank, A. H. Edwards, C. E. Hembree, and T. R. Mattsson, "Mechanisms for radiation dose-rate sensitivity of bipolar transistors," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1901-1909, Dec. 2003.