-
1
-
-
84939053099
-
Minimum size and maximum packing density of nonredundant semiconductor devices
-
J. T. Wallmark and S. M. Marcus, "Minimum size and maximum packing density of nonredundant semiconductor devices," Proc. IRE, vol. 50, p. 286, 1962.
-
(1962)
Proc. IRE
, vol.50
, pp. 286
-
-
Wallmark, J.T.1
Marcus, S.M.2
-
2
-
-
84904466214
-
Satellite anomalies from galactic cosmic rays
-
Dec.
-
D. Binder, E. C. Smith, and A. B. Holman, "Satellite anomalies from galactic cosmic rays," IEEE Trans. Nucl. Sci., vol. 22, pp. 2675-2680, Dec. 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.22
, pp. 2675-2680
-
-
Binder, D.1
Smith, E.C.2
Holman, A.B.3
-
3
-
-
0038716834
-
-
D. Fleetwood, Ed.; June
-
D. Fleetwood, Ed., IEEE Trans. Nucl. Sci., June 1996, vol. 43,.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
-
-
-
5
-
-
0005432279
-
Four terminal pnpn transistors
-
J. J. Ebers, "Four terminal pnpn transistors," Proc. IRE, vol. 40, p. 1361, 1952.
-
(1952)
Proc. IRE
, vol.40
, pp. 1361
-
-
Ebers, J.J.1
-
6
-
-
84937744368
-
p-n-p-n transistor switches
-
J. L. Moll, M. Tanenbaum, J. M. Goldey, and N. Holonyak, "p-n-p-n transistor switches," Proc. IRE, vol. 44, p. 1174, 1956.
-
(1956)
Proc. IRE
, vol.44
, pp. 1174
-
-
Moll, J.L.1
Tanenbaum, M.2
Goldey, J.M.3
Holonyak, N.4
-
7
-
-
0020915917
-
Latchup in CMOS devices from heavy ions
-
Dec.
-
K. Soliman and D. K. Nichols, "Latchup in CMOS devices from heavy ions," IEEE Trans. Nucl. Sci., vol. 30, pp. 4514-519, Dec. 1983.
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.30
, pp. 4514-4519
-
-
Soliman, K.1
Nichols, D.K.2
-
10
-
-
0038040245
-
Radiation induced regeneration through the p-n junction isolation of monolithic ICs
-
Dec.
-
G. Kinoshita, C. T. Kleiner, and E. D. Johnson, "Radiation induced regeneration through the p-n junction isolation of monolithic ICs," IEEE Trans. Nucl. Sci., vol. 5, Dec., 1965.
-
(1965)
IEEE Trans. Nucl. Sci.
, vol.5
-
-
Kinoshita, G.1
Kleiner, C.T.2
Johnson, E.D.3
-
11
-
-
0014617202
-
Radiation-induced integrated circuit latchup
-
J. F. Leavy and R. A. Poll, "Radiation-induced integrated circuit latchup," IEEE Trans. Nucl. Sci., vol. 6, pp. 96-103, 1969.
-
(1969)
IEEE Trans. Nucl. Sci.
, vol.6
, pp. 96-103
-
-
Leavy, J.F.1
Poll, R.A.2
-
12
-
-
0015770573
-
Latch-up in CMOS integrated circuits
-
B. L. Gregory and B. D. Shafer, "Latch-up in CMOS integrated circuits," IEEE Trans, Nucl. Sci., vol. 20, pp. 293-2991, 1973.
-
(1973)
IEEE Trans, Nucl. Sci.
, vol.20
, pp. 293-2991
-
-
Gregory, B.L.1
Shafer, B.D.2
-
13
-
-
0018111402
-
Latchup screening of LSI devices
-
L. L. Sivo, R. Rosen, and L. C. Jeffers, "Latchup screening of LSI devices," IEEE Trans. Nucl. Sci., vol. 25, pp. 1534-1537, 1978.
-
(1978)
IEEE Trans. Nucl. Sci.
, vol.25
, pp. 1534-1537
-
-
Sivo, L.L.1
Rosen, R.2
Jeffers, L.C.3
-
14
-
-
0018554158
-
Simulation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories
-
W. A. Kolasinsky, J. B. Blake, J. K. Anthony, W. E. Price, and E. C. Smith, "Simulation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories," IEEE Trans. Nucl. Sci., vol. 26, pp. 5087-5091, 1979.
-
(1979)
IEEE Trans. Nucl. Sci.
, vol.26
, pp. 5087-5091
-
-
Kolasinsky, W.A.1
Blake, J.B.2
Anthony, J.K.3
Price, W.E.4
Smith, E.C.5
-
15
-
-
0019284731
-
A study of single event upsets in static RAMS
-
Dec.
-
W. E. Price, D. K. Nichols, and K. A. Soliman, "A study of single event upsets in static RAMS," IEEE Trans. Nucl. Sci., vol. 27, pp. 1506-1215, Dec. 1980.
-
(1980)
IEEE Trans. Nucl. Sci.
, vol.27
, pp. 1506-1215
-
-
Price, W.E.1
Nichols, D.K.2
Soliman, K.A.3
-
16
-
-
0020937805
-
Cosmic ray simulation experiments for the study of single event upsets and latch-up in CMOS memories
-
J. H. Stephen, T. K. Sanderson, D. Mapper, J. Farren, R. Harboe-Sorensen, and L. Adams, "Cosmic ray simulation experiments for the study of single event upsets and latch-up in CMOS memories," IEEE Trans. Nucl. Sci., vol. 30, pp. 4464-4469, 1983.
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.30
, pp. 4464-4469
-
-
Stephen, J.H.1
Sanderson, T.K.2
Mapper, D.3
Farren, J.4
Harboe-Sorensen, R.5
Adams, L.6
-
17
-
-
0025682739
-
Latchup in CMOS from single particles
-
A. H. Johnston and B. W. Hughlock, "Latchup in CMOS from single particles," IEEE Trans. Nucl. Sci., vol. 37, pp. 1886-1893, 1990.
-
(1990)
IEEE Trans. Nucl. Sci.
, vol.37
, pp. 1886-1893
-
-
Johnston, A.H.1
Hughlock, B.W.2
-
18
-
-
0022908702
-
The effect of elevated temperature on latchup and bit errors in CMOS devices
-
W. A. Kolasinski, R. Koga, E. Schnauss, and J. Duffey, "The effect of elevated temperature on latchup and bit errors in CMOS devices," IEEE Trans. Nucl. Sci., vol. 33, pp. 1605-1609, 1986.
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.33
, pp. 1605-1609
-
-
Kolasinski, W.A.1
Koga, R.2
Schnauss, E.3
Duffey, J.4
-
19
-
-
0022868813
-
Numerical simulations of SEU induced latch-up
-
J. G. Rollins, W. A. Kolasinski, D. C. Marvin, and R. Koga, "Numerical simulations of SEU induced latch-up," IEEE Trans. Nucl. Sci., vol. 33, pp. 1565-1570, 1986.
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.33
, pp. 1565-1570
-
-
Rollins, J.G.1
Kolasinski, W.A.2
Marvin, D.C.3
Koga, R.4
-
20
-
-
0022243469
-
Comparison of 2D memory SEU transport simulation with experiments
-
Dec.
-
J. S. Fu, H. T. Weaver, R. Koga, and W. A. Kolasinski, "Comparison of 2D memory SEU transport simulation with experiments," IEEE Trans. Nucl. Sci., vol. 32, pp. 4145-4151, Dec. 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 4145-4151
-
-
Fu, J.S.1
Weaver, H.T.2
Koga, R.3
Kolasinski, W.A.4
-
21
-
-
0026370425
-
The effect of temperature on single-particle latchup
-
Dec.
-
A. N. Johnston, B. W. Hughlock, M. P. Baze, and R. E. Plaag, "The effect of temperature on single-particle latchup," IEEE Trans. Nucl. Sci., vol. 38, pp. 1435-1441, Dec. 1991.
-
(1991)
IEEE Trans. Nucl. Sci.
, vol.38
, pp. 1435-1441
-
-
Johnston, A.N.1
Hughlock, B.W.2
Baze, M.P.3
Plaag, R.E.4
-
22
-
-
84912969979
-
A verified proton-induced latch-up in space
-
L. Adams, E. J. Dayy, R. Harboe-Sorensen, R. Nickson, J. Haines, W. Schafer, M. Conrad, H. Griech, J. Merkel, T. Schwall, and R. Henned, "A verified proton-induced latch-up in space," IEEE Trans. Nucl. Sci., vol. 39, pp. 1804-1808, 1992.
-
(1992)
IEEE Trans. Nucl. Sci.
, vol.39
, pp. 1804-1808
-
-
Adams, L.1
Dayy, E.J.2
Harboe-Sorensen, R.3
Nickson, R.4
Haines, J.5
Schafer, W.6
Conrad, M.7
Griech, H.8
Merkel, J.9
Schwall, T.10
Henned, R.11
-
23
-
-
0027875528
-
Simple model for proton-induced latchup
-
P. J. McNulty, W. G. Abdel-Kader, W. J. Beauvais, L. Adams, E. J. Day, and R. Harboe-Sorensen, "Simple model for proton-induced latchup," IEEE Trans. Nucl. Sci., vol. 40, pp. 1947-1951, 1993.
-
(1993)
IEEE Trans. Nucl. Sci.
, vol.40
, pp. 1947-1951
-
-
McNulty, P.J.1
Abdel-Kader, W.G.2
Beauvais, W.J.3
Adams, L.4
Day, E.J.5
Harboe-Sorensen, R.6
-
24
-
-
46749131129
-
An observation of proton-induced latchup
-
D. K. Nichols, J. R. Coss, R. K. Watons, H. R. Schwartz, and R. L. Pease, "An observation of proton-induced latchup," IEEE Trans. Nucl. Sci., vol. 39, pp. 1654-1656, 1992.
-
(1992)
IEEE Trans. Nucl. Sci.
, vol.39
, pp. 1654-1656
-
-
Nichols, D.K.1
Coss, J.R.2
Watons, R.K.3
Schwartz, H.R.4
Pease, R.L.5
-
25
-
-
0030126279
-
Approaches to proton single-event rate calculations
-
E. L. Petersen, "Approaches to proton single-event rate calculations," IEEE Trans. Nucl. Sci., vol. 43, pp. 496-520, 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 496-520
-
-
Petersen, E.L.1
-
26
-
-
0031354388
-
Latchup in integrated circuits from energetic protons
-
A. H. Johnston, G. M. Swift, and L. D. Edmonds, "Latchup in integrated circuits from energetic protons," IEEE Trans. Nucl. Sci., vol. 44, pp. 2367-2377, 1997.
-
(1997)
IEEE Trans. Nucl. Sci.
, vol.44
, pp. 2367-2377
-
-
Johnston, A.H.1
Swift, G.M.2
Edmonds, L.D.3
-
27
-
-
0033306969
-
Cell design modifications to harden a N-channel power IGBT against single event latchup
-
E. Lorfevre, B. Sanges, G. Bruguier, J. M. Palaue, J. Gasiot, M. C. Calvet, and R. Ecoffet, "Cell design modifications to harden a N-channel power IGBT against single event latchup," IEEE Trans. Nucl. Sci., vol. 46, pp. 1410-1414, 1999.
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, pp. 1410-1414
-
-
Lorfevre, E.1
Sanges, B.2
Bruguier, G.3
Palaue, J.M.4
Gasiot, J.5
Calvet, M.C.6
Ecoffet, R.7
-
28
-
-
0020550151
-
A three micron CMOS technology for custom high reliability and radiation hardened integrated circuits
-
T. V. Nordstrom, F. W. Sexton, and R. W. Light, "A three micron CMOS technology for custom high reliability and radiation hardened integrated circuits," in 5th IEEE Custom Integrated Circuits Conf., Rochester, NY, May 1983.
-
5th IEEE Custom Integrated Circuits Conf., Rochester, NY, May 1983
-
-
Nordstrom, T.V.1
Sexton, F.W.2
Light, R.W.3
-
29
-
-
0036956113
-
Latent damage in CMOS devices from single-event latchup
-
H. N. Becker, T. J. F. Miyahira, and A. H. Johnston, "Latent damage in CMOS devices from single-event latchup," IEEE Trans. Nucl. Sci., vol. 49, pp. 3009-3015, 2002.
-
(2002)
IEEE Trans. Nucl. Sci.
, vol.49
, pp. 3009-3015
-
-
Becker, H.N.1
Miyahira, T.J.F.2
Johnston, A.H.3
-
30
-
-
85032543383
-
Etch pit formation in silicon at Al-Si contacts due to transport of silicon in aluminum by momentum exchange with conducting electrons
-
J. R. Black, "Etch pit formation in silicon at Al-Si contacts due to transport of silicon in aluminum by momentum exchange with conducting electrons," J. Electrochemical Soc., vol. 115, no. 8, p. C242, 1968.
-
(1968)
J. Electrochemical Soc.
, vol.115
, Issue.8
-
-
Black, J.R.1
-
31
-
-
0022921353
-
Burnout of power MOS transistors with heavy ions of californium-252
-
A. E. Waskiewicz, J. W. Groniger, V. H. Strahan, and D. M. Long, "Burnout of power MOS transistors with heavy ions of Californium-252," IEEE Trans. Nucl. Sci., vol. 33, pp. 1710-1713, 1986.
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.33
, pp. 1710-1713
-
-
Waskiewicz, A.E.1
Groniger, J.W.2
Strahan, V.H.3
Long, D.M.4
-
32
-
-
84939736673
-
Charge generation by heavy ions in power MOSFET's, burnout space predictions, and dynamic SEB sensitivity
-
E. G. Stassinopoulos, G. J. Brucker, P. Calvel, A. Baiget, C. Peyrotte, and R. Gaillard, "Charge generation by heavy ions in power MOSFET's, burnout space predictions, and dynamic SEB sensitivity," IEEE Trans. Nucl. Sci., vol. 39, pp. 1704-1711, 1992.
-
(1992)
IEEE Trans. Nucl. Sci.
, vol.39
, pp. 1704-1711
-
-
Stassinopoulos, E.G.1
Brucker, G.J.2
Calvel, P.3
Baiget, A.4
Peyrotte, C.5
Gaillard, R.6
-
33
-
-
0023542228
-
SEU sensitivity of power converters with MOSFETS in space
-
G. J. Brucker, P. Messel, D. Oberg, J. Wert, and T. Criswell, "SEU sensitivity of power converters with MOSFETS in space," IEEE Trans. Nucl. Sci., vol. 34, pp. 1792-1795, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1792-1795
-
-
Brucker, G.J.1
Messel, P.2
Oberg, D.3
Wert, J.4
Criswell, T.5
-
34
-
-
0023567724
-
First nondestructive measurements of power MOSFET single event burnout cross sections
-
D. L. Oberg and J. L. Wert. "First nondestructive measurements of power MOSFET single event burnout cross sections," IEEE Trans. Nucl. Sci., vol. 34, pp. 1736-1741, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1736-1741
-
-
Oberg, D.L.1
Wert, J.L.2
-
35
-
-
0023560044
-
Heavy-ion-induced gate rupture in power MOSFETS
-
Dec.
-
T. A. Fischer, "Heavy-ion-induced gate rupture in power MOSFETS," IEEE Trans. Nucl. Sci., vol. 34, pp. 1786-1791, Dec. 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1786-1791
-
-
Fischer, T.A.1
-
36
-
-
0023594014
-
Simulation of heavy charged particle tracks using focused laser beams
-
A. K. Richter and I. Arimura, "Simulation of heavy charged particle tracks using focused laser beams," IEEE Trans. Nucl. Sci., vol. 34, pp. 1234-1239, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1234-1239
-
-
Richter, A.K.1
Arimura, I.2
-
37
-
-
0022229389
-
Current induced avalanche in epitaxial structures
-
Dec.
-
T. F. Wrobel, F. N. Coppage, G. L. Hash, and A. Smith, "Current induced avalanche in epitaxial structures," IEEE Trans. Nucl. Sci., vol. 32, pp. 3991-3995. Dec. 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 3991-3995
-
-
Wrobel, T.F.1
Coppage, F.N.2
Hash, G.L.3
Smith, A.4
-
38
-
-
0023532531
-
Analytical model for single event burnout of power MOSFETs
-
J. H. Hohl and K. F. Galloway, "Analytical model for single event burnout of power MOSFETs," IEEE Trans. Nucl. Sci., vol. 34, pp. 1275-1230, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1275-1230
-
-
Hohl, J.H.1
Galloway, K.F.2
-
39
-
-
0024946276
-
Features of the triggering mechanism for single event burnout of power MOSFETs
-
J. H. Hohl and G. H. Johnson, "Features of the triggering mechanism for single event burnout of power MOSFETs," IEEE Trans. Nucl. Sci., vol. 35, pp. 2260-2266, 1989.
-
(1989)
IEEE Trans. Nucl. Sci.
, vol.35
, pp. 2260-2266
-
-
Hohl, J.H.1
Johnson, G.H.2
-
40
-
-
0024942841
-
Development of cosmic ray hardened power MOSFETs
-
J. L. Titus, L. S. Jamiolkowski, and C. F. Wheatley, "Development of cosmic ray hardened power MOSFETs," IEEE Trans. Nucl. Sci., vol. 36, pp. 2375-2382, 1989.
-
(1989)
IEEE Trans. Nucl. Sci.
, vol.36
, pp. 2375-2382
-
-
Titus, J.L.1
Jamiolkowski, L.S.2
Wheatley, C.F.3
-
41
-
-
0026400772
-
Comparison of experimental measurements of power MOSFET SEB's in dynamic and static modes
-
P. Calvel, C. Peyrotte, A. Baiget, and E. G. Stassinopoulos, "Comparison of experimental measurements of power MOSFET SEB's in dynamic and static modes," IEEE Trans. Nucl. Sci., vol. 38, pp. 1310-1314, 1991.
-
(1991)
IEEE Trans. Nucl. Sci.
, vol.38
, pp. 1310-1314
-
-
Calvel, P.1
Peyrotte, C.2
Baiget, A.3
Stassinopoulos, E.G.4
-
42
-
-
0026382712
-
Single-event burnout of power bipolar junction transistors
-
J. L. Titus, G. H. Johnson, R. D. Schrimpf, and K. F. Galloway, "Single-event burnout of power bipolar junction transistors," IEEE Trans. Nucl. Sci., vol. 38, pp. 1315-1322, 1991.
-
(1991)
IEEE Trans. Nucl. Sci.
, vol.38
, pp. 1315-1322
-
-
Titus, J.L.1
Johnson, G.H.2
Schrimpf, R.D.3
Galloway, K.F.4
-
43
-
-
0038044085
-
Single-event effects ground testing and on-orbit rate prediction methods: The past, present and future
-
June
-
R. A. Reed, J. Kinnison, J. C. Pickel, S. Buchner, P. W. Marshall, S. Kniffin, and K. A. LaBel, "Single-event effects ground testing and on-orbit rate prediction methods: The past, present and future," IEEE Trans. Nucl. Sci., vol. 50, pp. 622-634, June 2003.
-
(2003)
IEEE Trans. Nucl. Sci.
, vol.50
, pp. 622-634
-
-
Reed, R.A.1
Kinnison, J.2
Pickel, J.C.3
Buchner, S.4
Marshall, P.W.5
Kniffin, S.6
LaBel, K.A.7
-
44
-
-
0023562593
-
The size effect of ion charge tracks on single event multiple-bit upset
-
R. C. Martin, N. M. Ghoniem, Y. Song, and J. S. Cable, "The size effect of ion charge tracks on single event multiple-bit upset," IEEE Trans. Nucl. Sci., vol. 34, pp. 1305-1309, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1305-1309
-
-
Martin, R.C.1
Ghoniem, N.M.2
Song, Y.3
Cable, J.S.4
-
45
-
-
0000076826
-
Mechanism for single-event burnout of power MOSFET's and its characterization technique
-
Dec.
-
S. Kuboyama, S. Matsuda, T. Kanno, and T. Ishii, "Mechanism for single-event burnout of power MOSFET's and its characterization technique," IEEE Trans. Nucl. Sci., vol. 39, pp. 1698-1703, Dec. 1992.
-
(1992)
IEEE Trans. Nucl. Sci.
, vol.39
, pp. 1698-1703
-
-
Kuboyama, S.1
Matsuda, S.2
Kanno, T.3
Ishii, T.4
-
46
-
-
0030129244
-
Microbeam studies of single event effects
-
Apr.
-
F. W. Sexton, "Microbeam studies of single event effects," IEEE Trans. Nucl. Sci., vol. 43, pp. 687-695, Apr. 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 687-695
-
-
Sexton, F.W.1
-
47
-
-
0026400769
-
Determination of SEU parameters of NMOS and CMOS SRAMs
-
P. J. McNulty, W. J. Beauvais, and D. R. Roth, "Determination of SEU parameters of NMOS and CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 38, pp. 1463-1470, 1991.
-
(1991)
IEEE Trans. Nucl. Sci.
, vol.38
, pp. 1463-1470
-
-
McNulty, P.J.1
Beauvais, W.J.2
Roth, D.R.3
-
48
-
-
55249100702
-
Temperature dependence of single-event burnout in n-channel power MOSFETs
-
G. H. Johnson, R. D. Schrimpf, K. F. Galloway, and R. Koga, "Temperature dependence of single-event burnout in n-channel power MOSFETs," IEEE Trans. Nucl. Sci., vol. 39, pp. 1605-1612, 1992.
-
(1992)
IEEE Trans. Nucl. Sci.
, vol.39
, pp. 1605-1612
-
-
Johnson, G.H.1
Schrimpf, R.D.2
Galloway, K.F.3
Koga, R.4
-
49
-
-
0028710491
-
Evidence of the ion's impact position effect on SEB in n-channel power MOSFETs
-
C. Dachs, F. Rouband, J.-M. Palau, G. Bruguier, J. Gasiot, and P. Tastet, "Evidence of the ion's impact position effect on SEB in n-channel power MOSFETs," IEEE Trans. Nucl. Sci., vol. 41, pp. 2167-2171, 1994.
-
(1994)
IEEE Trans. Nucl. Sci.
, vol.41
, pp. 2167-2171
-
-
Dachs, C.1
Rouband, F.2
Palau, J.-M.3
Bruguier, G.4
Gasiot, J.5
Tastet, P.6
-
50
-
-
84879206062
-
Burnout thresholds and cross sections of power MOSFET transistors with heavy ions
-
Rockwell Int. Rep, Nov.
-
A. E. Waskiewicz and J. W. Groninger, "Burnout thresholds and cross sections of power MOSFET transistors with heavy ions," Rockwell Int. Rep., Nov. 1988.
-
(1988)
-
-
Waskiewicz, A.E.1
Groninger, J.W.2
-
51
-
-
0030375854
-
First observations of power MOSFET burnout with high energy neutrons
-
D. L. Oberg, J. L. Wert, E. Normand, P. P. Majewski, and S. A. Wender, "First observations of power MOSFET burnout with high energy neutrons," IEEE Trans. Nucl. Sci., vol. 43, pp. 2913-1920, 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 2913-2920
-
-
Oberg, D.L.1
Wert, J.L.2
Normand, E.3
Majewski, P.P.4
Wender, S.A.5
-
52
-
-
0030350167
-
First observation of proton induced power MOSFET burnout in space: The CRUX experiment on APEX
-
Dec.
-
J. W. Adophesen, J. L. Barth, and G. B. Gee, "First observation of proton induced power MOSFET burnout in space: The CRUX experiment on APEX," IEEE Trans. Nucl. Sci., vol. 43, pp. 2921-2926, Dec. 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 2921-2926
-
-
Adophesen, J.W.1
Barth, J.L.2
Gee, G.B.3
-
53
-
-
0031341065
-
Neutron-induced single event burnout in high voltage electronics
-
Dec.
-
E. Normand, J. L. Wert, D. L. Oberg, P. P. Majewski, and P. Voss, "Neutron-induced single event burnout in high voltage electronics," IEEE Trans. on Nucl. Sci., vol. 44, pp. 2358-2366, Dec. 1997.
-
(1997)
IEEE Trans. on Nucl. Sci.
, vol.44
, pp. 2358-2366
-
-
Normand, E.1
Wert, J.L.2
Oberg, D.L.3
Majewski, P.P.4
Voss, P.5
-
54
-
-
84937995134
-
Cosmic ray induced errors in MOS devices
-
Apr.
-
J. C. Pickel, and T. J. Blandford, Jr., "Cosmic ray induced errors in MOS devices," IEEE Trans. Nucl. Sci., vol. 27, pp. 1005-1015, Apr. 1980.
-
(1980)
IEEE Trans. Nucl. Sci.
, vol.27
, pp. 1005-1015
-
-
Pickel, J.C.1
Blandford T.J., Jr.2
-
55
-
-
0021628031
-
Cosmic ray induced permanent damage in MNOS EAROMs
-
Dec.
-
T. J. Blandford, Jr., A. E. Waskiewicz, and J. C. Pickel, "Cosmic ray induced permanent damage in MNOS EAROMs," IEEE Trans. Nucl. Sci., vol. 31, pp. 1568-1570, Dec. 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, pp. 1568-1570
-
-
Blandford T.J., Jr.1
Waskiewicz, A.E.2
Pickel, J.C.3
-
56
-
-
0022184627
-
Heavy ion induced permanent damage in MNOS gate insulators
-
Dec.
-
J. C. Pickel and A. E. Waskiewicz, "Heavy ion induced permanent damage in MNOS gate insulators," IEEE Trans. Nucl. Sci., vol. 32, pp. 4176-4179, Dec. 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 4176-4179
-
-
Pickel, J.C.1
Waskiewicz, A.E.2
-
58
-
-
0023562592
-
On heavy ion induced hard-errors in dielectric structures
-
Dec.
-
T. F. Wrobel, "On heavy ion induced hard-errors in dielectric structures," IEEE Trans. Nucl. Sci., vol. 34, pp. 1262-1268, Dec. 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1262-1268
-
-
Wrobel, T.F.1
-
59
-
-
0038716826
-
Ion-induced electrical breakdown in metal-oxide-silicon capacitors
-
A. A. Milgram, "Ion-induced electrical breakdown in metal-oxide-silicon capacitors," J. Appl. Phys., vol. 67, no. 3, pp. 1461-1470, 1990.
-
(1990)
J. Appl. Phys.
, vol.67
, Issue.3
, pp. 1461-1470
-
-
Milgram, A.A.1
-
60
-
-
0027874496
-
A conceptual model of single-event gate-rupture in power MOSFETs
-
Dec.
-
J. R. Brews, M. Allenspach, R. D. Schrimpf, and K. F. Galloway, "A conceptual model of single-event gate-rupture in power MOSFETs," IEEE Trans. Nucl. Sci., vol. 40, pp. 1959-1966, Dec. 1993.
-
(1993)
IEEE Trans. Nucl. Sci.
, vol.40
, pp. 1959-1966
-
-
Brews, J.R.1
Allenspach, M.2
Schrimpf, R.D.3
Galloway, K.F.4
-
61
-
-
0028721235
-
Evaluation of SEGR threshold in power MOSFETs
-
Dec.
-
M. Allenspach, J. R. Brews, I. Mouret, R. D. Schrimpt, and K. F. Galloway, "Evaluation of SEGR threshold in power MOSFETs," IEEE Trans. Nucl. Sci., vol. 41, pp. 2160-2166, Dec. 1994.
-
(1994)
IEEE Trans. Nucl. Sci.
, vol.41
, pp. 2160-2166
-
-
Allenspach, M.1
Brews, J.R.2
Mouret, I.3
Schrimpt, R.D.4
Galloway, K.F.5
-
62
-
-
0345750992
-
Single event gate rupture in commercial power MOSFETs
-
D. K. Nichols, J. R. Coss, and K. P. McCarty, "Single event gate rupture in commercial power MOSFETs," in Proc. 2nd Eur. Conf. Radiation and Its Effects on Components and Systems, Saint-Malo, France, Sept. 13-16, 1993, pp. 462-467.
-
Proc. 2nd Eur. Conf. Radiation and Its Effects on Components and Systems, Saint-Malo, France, Sept. 13-16, 1993
, pp. 462-467
-
-
Nichols, D.K.1
Coss, J.R.2
McCarty, K.P.3
-
63
-
-
0028693951
-
Single-event gate rupture in vertical power MOSFETs; an original empirical expression
-
Dec.
-
C. F. Wheatley, J. L. Titus, and D. I. Burton, "Single-event gate rupture in vertical power MOSFETs; An original empirical expression," IEEE Trans. Nucl. Sci., vol. 41, pp. 2152-2159, Dec. 1994.
-
(1994)
IEEE Trans. Nucl. Sci.
, vol.41
, pp. 2152-2159
-
-
Wheatley, C.F.1
Titus, J.L.2
Burton, D.I.3
-
64
-
-
0029546524
-
Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression
-
Dec.
-
J. L. Titus, C. F. Wheatley, D. I. Burton, I. Mouret, M. Allenspach, J. Brews, R. Schrimpf, K. Galloway, and R. L. Pease, "Impact of oxide thickness on SEGR failure in vertical power MOSFETs; Development of a semi-empirical expression," IEEE Trans. Nucl. Sci., vol. 42, pp. 1928-1934, Dec. 1995.
-
(1995)
IEEE Trans. Nucl. Sci.
, vol.42
, pp. 1928-1934
-
-
Titus, J.L.1
Wheatley, C.F.2
Burton, D.I.3
Mouret, I.4
Allenspach, M.5
Brews, J.6
Schrimpf, R.7
Galloway, K.8
Pease, R.L.9
-
65
-
-
0030365379
-
SEGR response of a radiation-hardened power MOSFET technology
-
Dec.
-
C. F. Wheatley, J. L. Titus, D. I. Burton, and D. R. Carley, "SEGR response of a radiation-hardened power MOSFET technology," IEEE Trans. Nucl. Sci., vol. 43, pp. 2944-2951, Dec. 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 2944-2951
-
-
Wheatley, C.F.1
Titus, J.L.2
Burton, D.I.3
Carley, D.R.4
-
66
-
-
0030359034
-
SEGR and SEB in n-channel power MOSFETs
-
M. Allenspach, C. Dachs, G. H. Johnson, R. D. Schrimpf, E. Lorfevre, J. M. Palau, J. R. Brews, K. F. Galloway, J. L. Titus, and C. F. Wheatley, "SEGR and SEB in n-channel power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, pp. 2927-2931, 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 2927-2931
-
-
Allenspach, M.1
Dachs, C.2
Johnson, G.H.3
Schrimpf, R.D.4
Lorfevre, E.5
Palau, J.M.6
Brews, J.R.7
Galloway, K.F.8
Titus, J.L.9
Wheatley, C.F.10
-
67
-
-
0029545691
-
Single-event gate rupture in power MOSFETs: Prediction of breakdown biases and evaluation of oxide thickness dependence
-
Dec.
-
M. Allenspach, I. Mouret, J. L. Titus, C. F. Wheatley Jr., R. L. Pease, J. R. Brews, R. D. Schrimpf, and K. F. Galloway, "Single-event gate rupture in power MOSFETs: Prediction of breakdown biases and evaluation of oxide thickness dependence," IEEE Trans. Nucl. Sci., vol. 42, pp. 1922-1927, Dec. 1995.
-
(1995)
IEEE Trans. Nucl. Sci.
, vol.42
, pp. 1922-1927
-
-
Allenspach, M.1
Mouret, I.2
Titus, J.L.3
Wheatley C.F., Jr.4
Pease, R.L.5
Brews, J.R.6
Schrimpf, R.D.7
Galloway, K.F.8
-
68
-
-
0032307020
-
Precursor ion damage and angular dependence of single event gate rupture in thin oxides
-
Dec.
-
F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, G. L. Hash, K. S. Krisch, M. L. Green, B. E. Weir, and P. J. Silverman, "Precursor ion damage and angular dependence of single event gate rupture in thin oxides," IEEE Trans. Nucl. Sci., vol. 45, pp. 2509-2518, Dec. 1998.
-
(1998)
IEEE Trans. Nucl. Sci.
, vol.45
, pp. 2509-2518
-
-
Sexton, F.W.1
Fleetwood, D.M.2
Shaneyfelt, M.R.3
Dodd, P.E.4
Hash, G.L.5
Krisch, K.S.6
Green, M.L.7
Weir, B.E.8
Silverman, P.J.9
-
69
-
-
0035723155
-
A new physics-based model for understanding single-event gate rupture in linear devices
-
Dec.
-
N. Boruta, G. K. Lum, H. O'Donnell, L. Robinette, M. R. Shaneyfelt, and J. R. Schwank, "A new physics-based model for understanding single-event gate rupture in linear devices," IEEE Trans. Nucl. Sci., vol. 48, pp. 1917-1924, Dec. 2001.
-
(2001)
IEEE Trans. Nucl. Sci.
, vol.48
, pp. 1917-1924
-
-
Boruta, N.1
Lum, G.K.2
O'Donnell, H.3
Robinette, L.4
Shaneyfelt, M.R.5
Schwank, J.R.6
-
70
-
-
0028710492
-
Temperature and angular dependence of substrate response in SEGR
-
Dec.
-
I. Mouret, M. Allenspach, R. D. Schrimpf, J. R. Brews, and K. F. Galloway, "Temperature and angular dependence of substrate response in SEGR," IEEE Trans. Nucl. Sci., vol. 41, pp. 2216-2221, Dec. 1994.
-
(1994)
IEEE Trans. Nucl. Sci.
, vol.41
, pp. 2216-2221
-
-
Mouret, I.1
Allenspach, M.2
Schrimpf, R.D.3
Brews, J.R.4
Galloway, K.F.5
-
71
-
-
0035721727
-
An improved stripe-cell SEGR hardened power MOSFET technology
-
Dec.
-
M. W. Savage, D. I. Burton, C. F. Wheatley, J. L. Titus, and J. E. Goldberg, "An improved stripe-cell SEGR hardened power MOSFET technology," IEEE Trans. Nucl. Sci., vol. 48, pp. 1872-1878, Dec. 2001.
-
(2001)
IEEE Trans. Nucl. Sci.
, vol.48
, pp. 1872-1878
-
-
Savage, M.W.1
Burton, D.I.2
Wheatley, C.F.3
Titus, J.L.4
Goldberg, J.E.5
-
72
-
-
0034451097
-
Analysis of SEB and SEGR in super-junction MOSFETs
-
Dec.
-
S. Huang, G. A. J. Amaratunga, and F. Udrea, "Analysis of SEB and SEGR in super-junction MOSFETs," IEEE Trans. Nucl. Sci., vol. 47, pp. 2640-2647, Dec. 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, pp. 2640-2647
-
-
Huang, S.1
Amaratunga, G.A.J.2
Udrea, F.3
-
73
-
-
0033330816
-
Recent radiation damage and single event effects results for microelectronics
-
M. V. O'Bryan, K. A. LaBel, R. A. Reed, J. W. Howard, J. L. Barth, C. M. Seidleck, P. W. Marshall, C. J. Marshall, H. S. Kim, D. K. Hawkins, M. A. Carts, and K. E. Forslund, "Recent radiation damage and single event effects results for microelectronics," in IEEE Radiation Effects Data Workshop Rec., 1999, pp. 1-14.
-
IEEE Radiation Effects Data Workshop Rec., 1999
, pp. 1-14
-
-
O'Bryan, M.V.1
LaBel, K.A.2
Reed, R.A.3
Howard, J.W.4
Barth, J.L.5
Seidleck, C.M.6
Marshall, P.W.7
Marshall, C.J.8
Kim, H.S.9
Hawkins, D.K.10
Carts, M.A.11
Forslund, K.E.12
-
74
-
-
0001608210
-
Destructive failure of OP470/OP471 operational amplifiers due to breakdown of gate oxides during space radiation performance qualification
-
P. T. McDonald, B. G. Henson, and W. J. Stapor, "Destructive failure of OP470/OP471 operational amplifiers due to breakdown of gate oxides during space radiation performance qualification," in HEART/GOMAC Conf. Rec., vol. 25, 2000, pp. 336-339.
-
(2000)
HEART/GOMAC Conf. Rec.
, vol.25
, pp. 336-339
-
-
McDonald, P.T.1
Henson, B.G.2
Stapor, W.J.3
-
75
-
-
0034451281
-
The impact of single event gate rupture in linear devices
-
Dec.
-
G. K. Lum, H. O'Donnell, and N. Boruta, "The impact of single event gate rupture in linear devices," IEEE Trans. Nucl. Sci., vol. 47, pp. 2373-2379, Dec. 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, pp. 2373-2379
-
-
Lum, G.K.1
O'Donnell, H.2
Boruta, N.3
-
76
-
-
0030370401
-
A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs
-
G. H. Johnson, K. F. Galloway, R. D. Schrimpf, J. L. Titus, C. F. Wheatley, M. Allenspach, and C. Dachs, "A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, pp. 2932-2937, 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 2932-2937
-
-
Johnson, G.H.1
Galloway, K.F.2
Schrimpf, R.D.3
Titus, J.L.4
Wheatley, C.F.5
Allenspach, M.6
Dachs, C.7
-
77
-
-
0030353809
-
Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs
-
J. L. Titus, C. F. Wheatley, M. Allenspach, R. D. Schrimpf, D. I. Burton, J. R. Brews, K. F. Galloway, and R. L. Pease, "Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, pp. 2938-2943, 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 2938-2943
-
-
Titus, J.L.1
Wheatley, C.F.2
Allenspach, M.3
Schrimpf, R.D.4
Burton, D.I.5
Brews, J.R.6
Galloway, K.F.7
Pease, R.L.8
-
78
-
-
0032313886
-
Effect of ion energy upon dielectric breakdown of the capacitor response
-
J. L. Titus, C. F. Wheatley, K. M. Van Tyne, J. F. Krieg, D. I. Burton, and A. B. Campbell, "Effect of ion energy upon dielectric breakdown of the capacitor response," IEEE Trans. Nucl. Sci., vol. 45, pp. 2492-2499, 1998.
-
(1998)
IEEE Trans. Nucl. Sci.
, vol.45
, pp. 2492-2499
-
-
Titus, J.L.1
Wheatley, C.F.2
Van Tyne, K.M.3
Krieg, J.F.4
Burton, D.I.5
Campbell, A.B.6
-
79
-
-
0033345357
-
On the role of energy deposition in triggering SEGR in power MOSFETs
-
L. E. Selva, G. M. Swift, W. A. Taylor, and L. D. Ddmonds, "On the role of energy deposition in triggering SEGR in power MOSFETs," IEEE Trans. Nucl. Sci., vol. 46, pp. 1403-1409, 1999.
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, pp. 1403-1409
-
-
Selva, L.E.1
Swift, G.M.2
Taylor, W.A.3
Ddmonds, L.D.4
-
80
-
-
0035723223
-
A study of ion energy and its effects upon and SEGR-hardened stripe-cell MOSFET technology
-
Dec.
-
J. L. Titus, C. F. Wheatley, J. E. Gillberg, and D. I. Burton, "A study of ion energy and its effects upon and SEGR-hardened stripe-cell MOSFET technology," IEEE Trans. Nucl. Sci., vol. 48, pp. 1879-1884, Dec. 2001.
-
(2001)
IEEE Trans. Nucl. Sci.
, vol.48
, pp. 1879-1884
-
-
Titus, J.L.1
Wheatley, C.F.2
Gillberg, J.E.3
Burton, D.I.4
-
81
-
-
0032307025
-
Proton-induced dielectric breakdown of power MOSFETs
-
Dec.
-
J. L. Titus and C. F. Wheatley, "Proton-induced dielectric breakdown of power MOSFETs," IEEE Trans. Nucl. Sci., vol. 45, pp. 2891-2897, Dec. 1998.
-
(1998)
IEEE Trans. Nucl. Sci.
, vol.45
, pp. 2891-2897
-
-
Titus, J.L.1
Wheatley, C.F.2
-
82
-
-
0028712340
-
SEU hardening of field programmable gate arrays (FPGA's) for space applications and device characterization
-
Dec.
-
R. Katz, R. Barto, R. McKerracher, B. Carkhuff, and R. Koga, "SEU hardening of field programmable gate arrays (FPGA's) for space applications and device characterization," IEEE Trans. Nucl. Sci., vol. 41, pp. 2179-2186, Dec. 1994.
-
(1994)
IEEE Trans. Nucl. Sci.
, vol.41
, pp. 2179-2186
-
-
Katz, R.1
Barto, R.2
McKerracher, R.3
Carkhuff, B.4
Koga, R.5
-
83
-
-
0028710490
-
A new class of single-event hard errors
-
Dec.
-
G. M. Swift, D. J. Padgett, and A. Johnston, "A new class of single-event hard errors," IEEE Trans. Nucl. Sci., vol. 41, pp. 2043-2048, Dec. 1994.
-
(1994)
IEEE Trans. Nucl. Sci.
, vol.41
, pp. 2043-2048
-
-
Swift, G.M.1
Padgett, D.J.2
Johnston, A.3
-
84
-
-
0030169878
-
An experimental survey of heavy ion induced dielectric rupture in Actel field programmable gate arrays (FPGA's)
-
June
-
G. Swift and R. Katz, "An experimental survey of heavy ion induced dielectric rupture in Actel field programmable gate arrays (FPGA's)," IEEE Trans. Nucl. Sci., vol. 32, pp. 967-972, June 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 967-972
-
-
Swift, G.1
Katz, R.2
-
85
-
-
0029463807
-
Using commercial semiconductor technologies in space
-
A. H. Johnston, C. I. Lee, B. G. Rax, and D. C. Shaw, "Using commercial semiconductor technologies in space," in Proc. 3rd Eur. Conf. Radiation and Its Effects on Components and Systems, Arcachon, France, Sept. 18-22, 1995, pp. 175-182.
-
Proc. 3rd Eur. Conf. Radiation and Its Effects on Components and Systems, Arcachon, France, Sept. 18-22, 1995
, pp. 175-182
-
-
Johnston, A.H.1
Lee, C.I.2
Rax, B.G.3
Shaw, D.C.4
-
86
-
-
0031386902
-
Single event gate rupture in thin gate oxides
-
Dec.
-
F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, and G. L. Hash, "Single event gate rupture in thin gate oxides," IEEE Trans. Nucl. Sci., vol. 44, pp. 2345-2352, Dec. 1997.
-
(1997)
IEEE Trans. Nucl. Sci.
, vol.44
, pp. 2345-2352
-
-
Sexton, F.W.1
Fleetwood, D.M.2
Shaneyfelt, M.R.3
Dodd, P.E.4
Hash, G.L.5
-
87
-
-
0032319589
-
Breakdown of gate oxides during irradiation with heavy ions
-
Dec.
-
A. H. Johnston, G. M. Swift, T. Miyahira, and L. D. Edmonds, "Breakdown of gate oxides during irradiation with heavy ions," IEEE Trans. Nucl. Sci., vol. 45, pp. 2500-2508, Dec. 1998.
-
(1998)
IEEE Trans. Nucl. Sci.
, vol.45
, pp. 2500-2508
-
-
Johnston, A.H.1
Swift, G.M.2
Miyahira, T.3
Edmonds, L.D.4
-
88
-
-
0035721958
-
Heavy-ion induced breakdown in ultra-thin gate oxides and high-k dielectrics
-
Dec.
-
L. W. Massengill, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, M. R. Shaneyfelt, T. L. Meisenheimer, P. E. Dodd, J. R. Schwank, Y. M. Lee, R. S. Johnson, and G. Lucovsky, "Heavy-ion induced breakdown in ultra-thin gate oxides and high-k dielectrics," IEEE Trans. Nucl. Sci., vol. 48, pp. 1904-1912, Dec. 2001.
-
(2001)
IEEE Trans. Nucl. Sci.
, vol.48
, pp. 1904-1912
-
-
Massengill, L.W.1
Choi, B.K.2
Fleetwood, D.M.3
Schrimpf, R.D.4
Galloway, K.F.5
Shaneyfelt, M.R.6
Meisenheimer, T.L.7
Dodd, P.E.8
Schwank, J.R.9
Lee, Y.M.10
Johnson, R.S.11
Lucovsky, G.12
-
89
-
-
0033315055
-
Prediction of early lethal failures of VDMOSFET's for commercial space systems
-
Dec.
-
J. L. Titus, C. F. Wheatley, T. H. Wheatley, W. A. Levinson, D. I. Burton, J. L. Barth, R. A. Reed, K. A. Label, J. W. Howard, and K. N. VanTyne, "Prediction of early lethal failures of VDMOSFET's for commercial space systems," IEEE Trans. Nucl. Sci., vol. 46, pp. 1640-1651, Dec. 1999.
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, pp. 1640-1651
-
-
Titus, J.L.1
Wheatley, C.F.2
Wheatley, T.H.3
Levinson, W.A.4
Burton, D.I.5
Barth, J.L.6
Reed, R.A.7
Label, K.A.8
Howard, J.W.9
VanTyne, K.N.10
-
90
-
-
0035723331
-
Early lethal SEGR failures of VDMOSFET's considering nonuniformity in the rad-hard device distribution
-
T. H. Wheatley, C. F. Wheatley, and J. L. Titus, "Early lethal SEGR failures of VDMOSFET's considering nonuniformity in the rad-hard device distribution," IEEE Trans. Nucl. Sci., vol. 48, pp. 2217-2221, 2001.
-
(2001)
IEEE Trans. Nucl. Sci.
, vol.48
, pp. 2217-2221
-
-
Wheatley, T.H.1
Wheatley, C.F.2
Titus, J.L.3
-
91
-
-
0018454952
-
Analytical model of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis
-
Apr.
-
T. Toyabe and S. Asai, "Analytical model of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis," IEEE Trans. Electron. Devices, vol. 26, pp. 453-461, Apr. 1979.
-
(1979)
IEEE Trans. Electron. Devices
, vol.26
, pp. 453-461
-
-
Toyabe, T.1
Asai, S.2
-
92
-
-
0020942842
-
Snap-back: A stable regenerative breakdown mode of MOS devices
-
Dec.
-
A. Ochoa, Jr., F. W. Sexton, T. F. Wrobel, G. L. Hash, and R. J. Sokel, "Snap-back: A stable regenerative breakdown mode of MOS devices," IEEE Trans. Nucl. Sci., vol. 30, pp. 4127-4130, Dec. 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.30
, pp. 4127-4130
-
-
Ochoa A., Jr.1
Sexton, F.W.2
Wrobel, T.F.3
Hash, G.L.4
Sokel, R.J.5
-
93
-
-
0024890333
-
Heavy ion induced snapback in CMOS devices
-
Dec.
-
R. Koga and W. A. Kolasinski, "Heavy ion induced snapback in CMOS devices," IEEE Trans. Nucl. Sci., vol. 36, pp. 2367-2374, Dec. 1989.
-
(1989)
IEEE Trans. Nucl. Sci.
, vol.36
, pp. 2367-2374
-
-
Koga, R.1
Kolasinski, W.A.2
-
94
-
-
0024133319
-
Single-transistor latch in SOI MOSFET's
-
Dec.
-
C.-E. D. Chen, M. Matloubian, R. Sundaresan, B.-Y. Mao, C. C. Wei, and G. P. Pollack, "Single-transistor latch in SOI MOSFET's," IEEE Electron. Device Lett., vol. 9, pp. 636-638, Dec. 1998.
-
(1998)
IEEE Electron. Device Lett.
, vol.9
, pp. 636-638
-
-
Chen, C.-E.D.1
Matloubian, M.2
Sundaresan, R.3
Mao, B.-Y.4
Wei, C.C.5
Pollack, G.P.6
-
95
-
-
0026370429
-
Charge collection mechanisms in MOS/SOI transistors irradiation by energetic heavy ions
-
Dec.
-
O. Musseau, J. L. Leray, V. Ferlet, A. Umbert, Y. M. Choic, and P. Hesto, "Charge collection mechanisms in MOS/SOI transistors irradiation by energetic heavy ions," IEEE Trans. Nucl. Sci., vol. 38, pp. 1226-1233, Dec. 1991.
-
(1991)
IEEE Trans. Nucl. Sci.
, vol.38
, pp. 1226-1233
-
-
Musseau, O.1
Leray, J.L.2
Ferlet, V.3
Umbert, A.4
Choic, Y.M.5
Hesto, P.6
-
96
-
-
0034451489
-
Single-event upset and snapback in silicon-on-insulator devices and integrated circuits
-
Dec.
-
P. E. Dodd, M. R. Shaneyfelt, D. S. Walsh, J. R. Schwank, G. L. Hash, R. A. Loemker, B. L. Draper, and P. S. Winokur, "Single-event upset and snapback in silicon-on-insulator devices and integrated circuits," IEEE Trans. Nucl. Sci., vol. 47, pp. 2165-2174, Dec. 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, pp. 2165-2174
-
-
Dodd, P.E.1
Shaneyfelt, M.R.2
Walsh, D.S.3
Schwank, J.R.4
Hash, G.L.5
Loemker, R.A.6
Draper, B.L.7
Winokur, P.S.8
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