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Volumn 50 III, Issue 3, 2003, Pages 603-621

Destructive single-event effects in semiconductor devices and ICs

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; HEAVY IONS; ION BOMBARDMENT; MOSFET DEVICES; NONVOLATILE STORAGE; SILICON ON INSULATOR TECHNOLOGY;

EID: 0038382382     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.813137     Document Type: Article
Times cited : (195)

References (96)
  • 1
    • 84939053099 scopus 로고
    • Minimum size and maximum packing density of nonredundant semiconductor devices
    • J. T. Wallmark and S. M. Marcus, "Minimum size and maximum packing density of nonredundant semiconductor devices," Proc. IRE, vol. 50, p. 286, 1962.
    • (1962) Proc. IRE , vol.50 , pp. 286
    • Wallmark, J.T.1    Marcus, S.M.2
  • 2
    • 84904466214 scopus 로고
    • Satellite anomalies from galactic cosmic rays
    • Dec.
    • D. Binder, E. C. Smith, and A. B. Holman, "Satellite anomalies from galactic cosmic rays," IEEE Trans. Nucl. Sci., vol. 22, pp. 2675-2680, Dec. 1975.
    • (1975) IEEE Trans. Nucl. Sci. , vol.22 , pp. 2675-2680
    • Binder, D.1    Smith, E.C.2    Holman, A.B.3
  • 3
    • 0038716834 scopus 로고    scopus 로고
    • D. Fleetwood, Ed.; June
    • D. Fleetwood, Ed., IEEE Trans. Nucl. Sci., June 1996, vol. 43,.
    • (1996) IEEE Trans. Nucl. Sci. , vol.43
  • 5
    • 0005432279 scopus 로고
    • Four terminal pnpn transistors
    • J. J. Ebers, "Four terminal pnpn transistors," Proc. IRE, vol. 40, p. 1361, 1952.
    • (1952) Proc. IRE , vol.40 , pp. 1361
    • Ebers, J.J.1
  • 7
    • 0020915917 scopus 로고
    • Latchup in CMOS devices from heavy ions
    • Dec.
    • K. Soliman and D. K. Nichols, "Latchup in CMOS devices from heavy ions," IEEE Trans. Nucl. Sci., vol. 30, pp. 4514-519, Dec. 1983.
    • (1983) IEEE Trans. Nucl. Sci. , vol.30 , pp. 4514-4519
    • Soliman, K.1    Nichols, D.K.2
  • 10
    • 0038040245 scopus 로고
    • Radiation induced regeneration through the p-n junction isolation of monolithic ICs
    • Dec.
    • G. Kinoshita, C. T. Kleiner, and E. D. Johnson, "Radiation induced regeneration through the p-n junction isolation of monolithic ICs," IEEE Trans. Nucl. Sci., vol. 5, Dec., 1965.
    • (1965) IEEE Trans. Nucl. Sci. , vol.5
    • Kinoshita, G.1    Kleiner, C.T.2    Johnson, E.D.3
  • 11
    • 0014617202 scopus 로고
    • Radiation-induced integrated circuit latchup
    • J. F. Leavy and R. A. Poll, "Radiation-induced integrated circuit latchup," IEEE Trans. Nucl. Sci., vol. 6, pp. 96-103, 1969.
    • (1969) IEEE Trans. Nucl. Sci. , vol.6 , pp. 96-103
    • Leavy, J.F.1    Poll, R.A.2
  • 12
    • 0015770573 scopus 로고
    • Latch-up in CMOS integrated circuits
    • B. L. Gregory and B. D. Shafer, "Latch-up in CMOS integrated circuits," IEEE Trans, Nucl. Sci., vol. 20, pp. 293-2991, 1973.
    • (1973) IEEE Trans, Nucl. Sci. , vol.20 , pp. 293-2991
    • Gregory, B.L.1    Shafer, B.D.2
  • 14
    • 0018554158 scopus 로고
    • Simulation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories
    • W. A. Kolasinsky, J. B. Blake, J. K. Anthony, W. E. Price, and E. C. Smith, "Simulation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories," IEEE Trans. Nucl. Sci., vol. 26, pp. 5087-5091, 1979.
    • (1979) IEEE Trans. Nucl. Sci. , vol.26 , pp. 5087-5091
    • Kolasinsky, W.A.1    Blake, J.B.2    Anthony, J.K.3    Price, W.E.4    Smith, E.C.5
  • 15
    • 0019284731 scopus 로고
    • A study of single event upsets in static RAMS
    • Dec.
    • W. E. Price, D. K. Nichols, and K. A. Soliman, "A study of single event upsets in static RAMS," IEEE Trans. Nucl. Sci., vol. 27, pp. 1506-1215, Dec. 1980.
    • (1980) IEEE Trans. Nucl. Sci. , vol.27 , pp. 1506-1215
    • Price, W.E.1    Nichols, D.K.2    Soliman, K.A.3
  • 16
    • 0020937805 scopus 로고
    • Cosmic ray simulation experiments for the study of single event upsets and latch-up in CMOS memories
    • J. H. Stephen, T. K. Sanderson, D. Mapper, J. Farren, R. Harboe-Sorensen, and L. Adams, "Cosmic ray simulation experiments for the study of single event upsets and latch-up in CMOS memories," IEEE Trans. Nucl. Sci., vol. 30, pp. 4464-4469, 1983.
    • (1983) IEEE Trans. Nucl. Sci. , vol.30 , pp. 4464-4469
    • Stephen, J.H.1    Sanderson, T.K.2    Mapper, D.3    Farren, J.4    Harboe-Sorensen, R.5    Adams, L.6
  • 17
    • 0025682739 scopus 로고
    • Latchup in CMOS from single particles
    • A. H. Johnston and B. W. Hughlock, "Latchup in CMOS from single particles," IEEE Trans. Nucl. Sci., vol. 37, pp. 1886-1893, 1990.
    • (1990) IEEE Trans. Nucl. Sci. , vol.37 , pp. 1886-1893
    • Johnston, A.H.1    Hughlock, B.W.2
  • 18
    • 0022908702 scopus 로고
    • The effect of elevated temperature on latchup and bit errors in CMOS devices
    • W. A. Kolasinski, R. Koga, E. Schnauss, and J. Duffey, "The effect of elevated temperature on latchup and bit errors in CMOS devices," IEEE Trans. Nucl. Sci., vol. 33, pp. 1605-1609, 1986.
    • (1986) IEEE Trans. Nucl. Sci. , vol.33 , pp. 1605-1609
    • Kolasinski, W.A.1    Koga, R.2    Schnauss, E.3    Duffey, J.4
  • 20
    • 0022243469 scopus 로고
    • Comparison of 2D memory SEU transport simulation with experiments
    • Dec.
    • J. S. Fu, H. T. Weaver, R. Koga, and W. A. Kolasinski, "Comparison of 2D memory SEU transport simulation with experiments," IEEE Trans. Nucl. Sci., vol. 32, pp. 4145-4151, Dec. 1985.
    • (1985) IEEE Trans. Nucl. Sci. , vol.32 , pp. 4145-4151
    • Fu, J.S.1    Weaver, H.T.2    Koga, R.3    Kolasinski, W.A.4
  • 25
    • 0030126279 scopus 로고    scopus 로고
    • Approaches to proton single-event rate calculations
    • E. L. Petersen, "Approaches to proton single-event rate calculations," IEEE Trans. Nucl. Sci., vol. 43, pp. 496-520, 1996.
    • (1996) IEEE Trans. Nucl. Sci. , vol.43 , pp. 496-520
    • Petersen, E.L.1
  • 26
    • 0031354388 scopus 로고    scopus 로고
    • Latchup in integrated circuits from energetic protons
    • A. H. Johnston, G. M. Swift, and L. D. Edmonds, "Latchup in integrated circuits from energetic protons," IEEE Trans. Nucl. Sci., vol. 44, pp. 2367-2377, 1997.
    • (1997) IEEE Trans. Nucl. Sci. , vol.44 , pp. 2367-2377
    • Johnston, A.H.1    Swift, G.M.2    Edmonds, L.D.3
  • 29
    • 0036956113 scopus 로고    scopus 로고
    • Latent damage in CMOS devices from single-event latchup
    • H. N. Becker, T. J. F. Miyahira, and A. H. Johnston, "Latent damage in CMOS devices from single-event latchup," IEEE Trans. Nucl. Sci., vol. 49, pp. 3009-3015, 2002.
    • (2002) IEEE Trans. Nucl. Sci. , vol.49 , pp. 3009-3015
    • Becker, H.N.1    Miyahira, T.J.F.2    Johnston, A.H.3
  • 30
    • 85032543383 scopus 로고
    • Etch pit formation in silicon at Al-Si contacts due to transport of silicon in aluminum by momentum exchange with conducting electrons
    • J. R. Black, "Etch pit formation in silicon at Al-Si contacts due to transport of silicon in aluminum by momentum exchange with conducting electrons," J. Electrochemical Soc., vol. 115, no. 8, p. C242, 1968.
    • (1968) J. Electrochemical Soc. , vol.115 , Issue.8
    • Black, J.R.1
  • 31
    • 0022921353 scopus 로고
    • Burnout of power MOS transistors with heavy ions of californium-252
    • A. E. Waskiewicz, J. W. Groniger, V. H. Strahan, and D. M. Long, "Burnout of power MOS transistors with heavy ions of Californium-252," IEEE Trans. Nucl. Sci., vol. 33, pp. 1710-1713, 1986.
    • (1986) IEEE Trans. Nucl. Sci. , vol.33 , pp. 1710-1713
    • Waskiewicz, A.E.1    Groniger, J.W.2    Strahan, V.H.3    Long, D.M.4
  • 32
    • 84939736673 scopus 로고
    • Charge generation by heavy ions in power MOSFET's, burnout space predictions, and dynamic SEB sensitivity
    • E. G. Stassinopoulos, G. J. Brucker, P. Calvel, A. Baiget, C. Peyrotte, and R. Gaillard, "Charge generation by heavy ions in power MOSFET's, burnout space predictions, and dynamic SEB sensitivity," IEEE Trans. Nucl. Sci., vol. 39, pp. 1704-1711, 1992.
    • (1992) IEEE Trans. Nucl. Sci. , vol.39 , pp. 1704-1711
    • Stassinopoulos, E.G.1    Brucker, G.J.2    Calvel, P.3    Baiget, A.4    Peyrotte, C.5    Gaillard, R.6
  • 34
    • 0023567724 scopus 로고
    • First nondestructive measurements of power MOSFET single event burnout cross sections
    • D. L. Oberg and J. L. Wert. "First nondestructive measurements of power MOSFET single event burnout cross sections," IEEE Trans. Nucl. Sci., vol. 34, pp. 1736-1741, 1987.
    • (1987) IEEE Trans. Nucl. Sci. , vol.34 , pp. 1736-1741
    • Oberg, D.L.1    Wert, J.L.2
  • 35
    • 0023560044 scopus 로고
    • Heavy-ion-induced gate rupture in power MOSFETS
    • Dec.
    • T. A. Fischer, "Heavy-ion-induced gate rupture in power MOSFETS," IEEE Trans. Nucl. Sci., vol. 34, pp. 1786-1791, Dec. 1987.
    • (1987) IEEE Trans. Nucl. Sci. , vol.34 , pp. 1786-1791
    • Fischer, T.A.1
  • 36
    • 0023594014 scopus 로고
    • Simulation of heavy charged particle tracks using focused laser beams
    • A. K. Richter and I. Arimura, "Simulation of heavy charged particle tracks using focused laser beams," IEEE Trans. Nucl. Sci., vol. 34, pp. 1234-1239, 1987.
    • (1987) IEEE Trans. Nucl. Sci. , vol.34 , pp. 1234-1239
    • Richter, A.K.1    Arimura, I.2
  • 37
    • 0022229389 scopus 로고
    • Current induced avalanche in epitaxial structures
    • Dec.
    • T. F. Wrobel, F. N. Coppage, G. L. Hash, and A. Smith, "Current induced avalanche in epitaxial structures," IEEE Trans. Nucl. Sci., vol. 32, pp. 3991-3995. Dec. 1985.
    • (1985) IEEE Trans. Nucl. Sci. , vol.32 , pp. 3991-3995
    • Wrobel, T.F.1    Coppage, F.N.2    Hash, G.L.3    Smith, A.4
  • 38
    • 0023532531 scopus 로고
    • Analytical model for single event burnout of power MOSFETs
    • J. H. Hohl and K. F. Galloway, "Analytical model for single event burnout of power MOSFETs," IEEE Trans. Nucl. Sci., vol. 34, pp. 1275-1230, 1987.
    • (1987) IEEE Trans. Nucl. Sci. , vol.34 , pp. 1275-1230
    • Hohl, J.H.1    Galloway, K.F.2
  • 39
    • 0024946276 scopus 로고
    • Features of the triggering mechanism for single event burnout of power MOSFETs
    • J. H. Hohl and G. H. Johnson, "Features of the triggering mechanism for single event burnout of power MOSFETs," IEEE Trans. Nucl. Sci., vol. 35, pp. 2260-2266, 1989.
    • (1989) IEEE Trans. Nucl. Sci. , vol.35 , pp. 2260-2266
    • Hohl, J.H.1    Johnson, G.H.2
  • 41
    • 0026400772 scopus 로고
    • Comparison of experimental measurements of power MOSFET SEB's in dynamic and static modes
    • P. Calvel, C. Peyrotte, A. Baiget, and E. G. Stassinopoulos, "Comparison of experimental measurements of power MOSFET SEB's in dynamic and static modes," IEEE Trans. Nucl. Sci., vol. 38, pp. 1310-1314, 1991.
    • (1991) IEEE Trans. Nucl. Sci. , vol.38 , pp. 1310-1314
    • Calvel, P.1    Peyrotte, C.2    Baiget, A.3    Stassinopoulos, E.G.4
  • 43
    • 0038044085 scopus 로고    scopus 로고
    • Single-event effects ground testing and on-orbit rate prediction methods: The past, present and future
    • June
    • R. A. Reed, J. Kinnison, J. C. Pickel, S. Buchner, P. W. Marshall, S. Kniffin, and K. A. LaBel, "Single-event effects ground testing and on-orbit rate prediction methods: The past, present and future," IEEE Trans. Nucl. Sci., vol. 50, pp. 622-634, June 2003.
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , pp. 622-634
    • Reed, R.A.1    Kinnison, J.2    Pickel, J.C.3    Buchner, S.4    Marshall, P.W.5    Kniffin, S.6    LaBel, K.A.7
  • 44
    • 0023562593 scopus 로고
    • The size effect of ion charge tracks on single event multiple-bit upset
    • R. C. Martin, N. M. Ghoniem, Y. Song, and J. S. Cable, "The size effect of ion charge tracks on single event multiple-bit upset," IEEE Trans. Nucl. Sci., vol. 34, pp. 1305-1309, 1987.
    • (1987) IEEE Trans. Nucl. Sci. , vol.34 , pp. 1305-1309
    • Martin, R.C.1    Ghoniem, N.M.2    Song, Y.3    Cable, J.S.4
  • 45
    • 0000076826 scopus 로고
    • Mechanism for single-event burnout of power MOSFET's and its characterization technique
    • Dec.
    • S. Kuboyama, S. Matsuda, T. Kanno, and T. Ishii, "Mechanism for single-event burnout of power MOSFET's and its characterization technique," IEEE Trans. Nucl. Sci., vol. 39, pp. 1698-1703, Dec. 1992.
    • (1992) IEEE Trans. Nucl. Sci. , vol.39 , pp. 1698-1703
    • Kuboyama, S.1    Matsuda, S.2    Kanno, T.3    Ishii, T.4
  • 46
    • 0030129244 scopus 로고    scopus 로고
    • Microbeam studies of single event effects
    • Apr.
    • F. W. Sexton, "Microbeam studies of single event effects," IEEE Trans. Nucl. Sci., vol. 43, pp. 687-695, Apr. 1996.
    • (1996) IEEE Trans. Nucl. Sci. , vol.43 , pp. 687-695
    • Sexton, F.W.1
  • 47
    • 0026400769 scopus 로고
    • Determination of SEU parameters of NMOS and CMOS SRAMs
    • P. J. McNulty, W. J. Beauvais, and D. R. Roth, "Determination of SEU parameters of NMOS and CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 38, pp. 1463-1470, 1991.
    • (1991) IEEE Trans. Nucl. Sci. , vol.38 , pp. 1463-1470
    • McNulty, P.J.1    Beauvais, W.J.2    Roth, D.R.3
  • 48
    • 55249100702 scopus 로고
    • Temperature dependence of single-event burnout in n-channel power MOSFETs
    • G. H. Johnson, R. D. Schrimpf, K. F. Galloway, and R. Koga, "Temperature dependence of single-event burnout in n-channel power MOSFETs," IEEE Trans. Nucl. Sci., vol. 39, pp. 1605-1612, 1992.
    • (1992) IEEE Trans. Nucl. Sci. , vol.39 , pp. 1605-1612
    • Johnson, G.H.1    Schrimpf, R.D.2    Galloway, K.F.3    Koga, R.4
  • 50
    • 84879206062 scopus 로고
    • Burnout thresholds and cross sections of power MOSFET transistors with heavy ions
    • Rockwell Int. Rep, Nov.
    • A. E. Waskiewicz and J. W. Groninger, "Burnout thresholds and cross sections of power MOSFET transistors with heavy ions," Rockwell Int. Rep., Nov. 1988.
    • (1988)
    • Waskiewicz, A.E.1    Groninger, J.W.2
  • 52
    • 0030350167 scopus 로고    scopus 로고
    • First observation of proton induced power MOSFET burnout in space: The CRUX experiment on APEX
    • Dec.
    • J. W. Adophesen, J. L. Barth, and G. B. Gee, "First observation of proton induced power MOSFET burnout in space: The CRUX experiment on APEX," IEEE Trans. Nucl. Sci., vol. 43, pp. 2921-2926, Dec. 1996.
    • (1996) IEEE Trans. Nucl. Sci. , vol.43 , pp. 2921-2926
    • Adophesen, J.W.1    Barth, J.L.2    Gee, G.B.3
  • 54
    • 84937995134 scopus 로고
    • Cosmic ray induced errors in MOS devices
    • Apr.
    • J. C. Pickel, and T. J. Blandford, Jr., "Cosmic ray induced errors in MOS devices," IEEE Trans. Nucl. Sci., vol. 27, pp. 1005-1015, Apr. 1980.
    • (1980) IEEE Trans. Nucl. Sci. , vol.27 , pp. 1005-1015
    • Pickel, J.C.1    Blandford T.J., Jr.2
  • 56
    • 0022184627 scopus 로고
    • Heavy ion induced permanent damage in MNOS gate insulators
    • Dec.
    • J. C. Pickel and A. E. Waskiewicz, "Heavy ion induced permanent damage in MNOS gate insulators," IEEE Trans. Nucl. Sci., vol. 32, pp. 4176-4179, Dec. 1985.
    • (1985) IEEE Trans. Nucl. Sci. , vol.32 , pp. 4176-4179
    • Pickel, J.C.1    Waskiewicz, A.E.2
  • 58
    • 0023562592 scopus 로고
    • On heavy ion induced hard-errors in dielectric structures
    • Dec.
    • T. F. Wrobel, "On heavy ion induced hard-errors in dielectric structures," IEEE Trans. Nucl. Sci., vol. 34, pp. 1262-1268, Dec. 1987.
    • (1987) IEEE Trans. Nucl. Sci. , vol.34 , pp. 1262-1268
    • Wrobel, T.F.1
  • 59
    • 0038716826 scopus 로고
    • Ion-induced electrical breakdown in metal-oxide-silicon capacitors
    • A. A. Milgram, "Ion-induced electrical breakdown in metal-oxide-silicon capacitors," J. Appl. Phys., vol. 67, no. 3, pp. 1461-1470, 1990.
    • (1990) J. Appl. Phys. , vol.67 , Issue.3 , pp. 1461-1470
    • Milgram, A.A.1
  • 60
    • 0027874496 scopus 로고
    • A conceptual model of single-event gate-rupture in power MOSFETs
    • Dec.
    • J. R. Brews, M. Allenspach, R. D. Schrimpf, and K. F. Galloway, "A conceptual model of single-event gate-rupture in power MOSFETs," IEEE Trans. Nucl. Sci., vol. 40, pp. 1959-1966, Dec. 1993.
    • (1993) IEEE Trans. Nucl. Sci. , vol.40 , pp. 1959-1966
    • Brews, J.R.1    Allenspach, M.2    Schrimpf, R.D.3    Galloway, K.F.4
  • 63
    • 0028693951 scopus 로고
    • Single-event gate rupture in vertical power MOSFETs; an original empirical expression
    • Dec.
    • C. F. Wheatley, J. L. Titus, and D. I. Burton, "Single-event gate rupture in vertical power MOSFETs; An original empirical expression," IEEE Trans. Nucl. Sci., vol. 41, pp. 2152-2159, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci. , vol.41 , pp. 2152-2159
    • Wheatley, C.F.1    Titus, J.L.2    Burton, D.I.3
  • 65
    • 0030365379 scopus 로고    scopus 로고
    • SEGR response of a radiation-hardened power MOSFET technology
    • Dec.
    • C. F. Wheatley, J. L. Titus, D. I. Burton, and D. R. Carley, "SEGR response of a radiation-hardened power MOSFET technology," IEEE Trans. Nucl. Sci., vol. 43, pp. 2944-2951, Dec. 1996.
    • (1996) IEEE Trans. Nucl. Sci. , vol.43 , pp. 2944-2951
    • Wheatley, C.F.1    Titus, J.L.2    Burton, D.I.3    Carley, D.R.4
  • 72
    • 0034451097 scopus 로고    scopus 로고
    • Analysis of SEB and SEGR in super-junction MOSFETs
    • Dec.
    • S. Huang, G. A. J. Amaratunga, and F. Udrea, "Analysis of SEB and SEGR in super-junction MOSFETs," IEEE Trans. Nucl. Sci., vol. 47, pp. 2640-2647, Dec. 2000.
    • (2000) IEEE Trans. Nucl. Sci. , vol.47 , pp. 2640-2647
    • Huang, S.1    Amaratunga, G.A.J.2    Udrea, F.3
  • 74
    • 0001608210 scopus 로고    scopus 로고
    • Destructive failure of OP470/OP471 operational amplifiers due to breakdown of gate oxides during space radiation performance qualification
    • P. T. McDonald, B. G. Henson, and W. J. Stapor, "Destructive failure of OP470/OP471 operational amplifiers due to breakdown of gate oxides during space radiation performance qualification," in HEART/GOMAC Conf. Rec., vol. 25, 2000, pp. 336-339.
    • (2000) HEART/GOMAC Conf. Rec. , vol.25 , pp. 336-339
    • McDonald, P.T.1    Henson, B.G.2    Stapor, W.J.3
  • 75
    • 0034451281 scopus 로고    scopus 로고
    • The impact of single event gate rupture in linear devices
    • Dec.
    • G. K. Lum, H. O'Donnell, and N. Boruta, "The impact of single event gate rupture in linear devices," IEEE Trans. Nucl. Sci., vol. 47, pp. 2373-2379, Dec. 2000.
    • (2000) IEEE Trans. Nucl. Sci. , vol.47 , pp. 2373-2379
    • Lum, G.K.1    O'Donnell, H.2    Boruta, N.3
  • 79
    • 0033345357 scopus 로고    scopus 로고
    • On the role of energy deposition in triggering SEGR in power MOSFETs
    • L. E. Selva, G. M. Swift, W. A. Taylor, and L. D. Ddmonds, "On the role of energy deposition in triggering SEGR in power MOSFETs," IEEE Trans. Nucl. Sci., vol. 46, pp. 1403-1409, 1999.
    • (1999) IEEE Trans. Nucl. Sci. , vol.46 , pp. 1403-1409
    • Selva, L.E.1    Swift, G.M.2    Taylor, W.A.3    Ddmonds, L.D.4
  • 80
    • 0035723223 scopus 로고    scopus 로고
    • A study of ion energy and its effects upon and SEGR-hardened stripe-cell MOSFET technology
    • Dec.
    • J. L. Titus, C. F. Wheatley, J. E. Gillberg, and D. I. Burton, "A study of ion energy and its effects upon and SEGR-hardened stripe-cell MOSFET technology," IEEE Trans. Nucl. Sci., vol. 48, pp. 1879-1884, Dec. 2001.
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , pp. 1879-1884
    • Titus, J.L.1    Wheatley, C.F.2    Gillberg, J.E.3    Burton, D.I.4
  • 81
    • 0032307025 scopus 로고    scopus 로고
    • Proton-induced dielectric breakdown of power MOSFETs
    • Dec.
    • J. L. Titus and C. F. Wheatley, "Proton-induced dielectric breakdown of power MOSFETs," IEEE Trans. Nucl. Sci., vol. 45, pp. 2891-2897, Dec. 1998.
    • (1998) IEEE Trans. Nucl. Sci. , vol.45 , pp. 2891-2897
    • Titus, J.L.1    Wheatley, C.F.2
  • 82
    • 0028712340 scopus 로고
    • SEU hardening of field programmable gate arrays (FPGA's) for space applications and device characterization
    • Dec.
    • R. Katz, R. Barto, R. McKerracher, B. Carkhuff, and R. Koga, "SEU hardening of field programmable gate arrays (FPGA's) for space applications and device characterization," IEEE Trans. Nucl. Sci., vol. 41, pp. 2179-2186, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci. , vol.41 , pp. 2179-2186
    • Katz, R.1    Barto, R.2    McKerracher, R.3    Carkhuff, B.4    Koga, R.5
  • 83
    • 0028710490 scopus 로고
    • A new class of single-event hard errors
    • Dec.
    • G. M. Swift, D. J. Padgett, and A. Johnston, "A new class of single-event hard errors," IEEE Trans. Nucl. Sci., vol. 41, pp. 2043-2048, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci. , vol.41 , pp. 2043-2048
    • Swift, G.M.1    Padgett, D.J.2    Johnston, A.3
  • 84
    • 0030169878 scopus 로고    scopus 로고
    • An experimental survey of heavy ion induced dielectric rupture in Actel field programmable gate arrays (FPGA's)
    • June
    • G. Swift and R. Katz, "An experimental survey of heavy ion induced dielectric rupture in Actel field programmable gate arrays (FPGA's)," IEEE Trans. Nucl. Sci., vol. 32, pp. 967-972, June 1996.
    • (1996) IEEE Trans. Nucl. Sci. , vol.32 , pp. 967-972
    • Swift, G.1    Katz, R.2
  • 87
    • 0032319589 scopus 로고    scopus 로고
    • Breakdown of gate oxides during irradiation with heavy ions
    • Dec.
    • A. H. Johnston, G. M. Swift, T. Miyahira, and L. D. Edmonds, "Breakdown of gate oxides during irradiation with heavy ions," IEEE Trans. Nucl. Sci., vol. 45, pp. 2500-2508, Dec. 1998.
    • (1998) IEEE Trans. Nucl. Sci. , vol.45 , pp. 2500-2508
    • Johnston, A.H.1    Swift, G.M.2    Miyahira, T.3    Edmonds, L.D.4
  • 90
    • 0035723331 scopus 로고    scopus 로고
    • Early lethal SEGR failures of VDMOSFET's considering nonuniformity in the rad-hard device distribution
    • T. H. Wheatley, C. F. Wheatley, and J. L. Titus, "Early lethal SEGR failures of VDMOSFET's considering nonuniformity in the rad-hard device distribution," IEEE Trans. Nucl. Sci., vol. 48, pp. 2217-2221, 2001.
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , pp. 2217-2221
    • Wheatley, T.H.1    Wheatley, C.F.2    Titus, J.L.3
  • 91
    • 0018454952 scopus 로고
    • Analytical model of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis
    • Apr.
    • T. Toyabe and S. Asai, "Analytical model of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis," IEEE Trans. Electron. Devices, vol. 26, pp. 453-461, Apr. 1979.
    • (1979) IEEE Trans. Electron. Devices , vol.26 , pp. 453-461
    • Toyabe, T.1    Asai, S.2
  • 93
    • 0024890333 scopus 로고
    • Heavy ion induced snapback in CMOS devices
    • Dec.
    • R. Koga and W. A. Kolasinski, "Heavy ion induced snapback in CMOS devices," IEEE Trans. Nucl. Sci., vol. 36, pp. 2367-2374, Dec. 1989.
    • (1989) IEEE Trans. Nucl. Sci. , vol.36 , pp. 2367-2374
    • Koga, R.1    Kolasinski, W.A.2
  • 95
    • 0026370429 scopus 로고
    • Charge collection mechanisms in MOS/SOI transistors irradiation by energetic heavy ions
    • Dec.
    • O. Musseau, J. L. Leray, V. Ferlet, A. Umbert, Y. M. Choic, and P. Hesto, "Charge collection mechanisms in MOS/SOI transistors irradiation by energetic heavy ions," IEEE Trans. Nucl. Sci., vol. 38, pp. 1226-1233, Dec. 1991.
    • (1991) IEEE Trans. Nucl. Sci. , vol.38 , pp. 1226-1233
    • Musseau, O.1    Leray, J.L.2    Ferlet, V.3    Umbert, A.4    Choic, Y.M.5    Hesto, P.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.