Precursor ion damage and angular dependence of single event gate rupture in thin oxides

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2509-2518

  Sexton, F W ^a   Fleetwood, D M ^b   Shaneyfelt, M R ^b   Dodd, P E ^a   Hash, G L ^a   Schanwald, L P ^b   Loemker, R A ^b   Krisch, K S ^b   Green, M L ^a   Weir, B E ^a   Silverman, P J ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; ENERGY TRANSFER; GATES (TRANSISTOR); GOLD; HEAVY IONS; ION BOMBARDMENT; IONIZING RADIATION; LEAKAGE CURRENTS; RADIATION DAMAGE; SEMICONDUCTOR DEVICE MODELS;

LINEAR ENERGY TRANSFER (LET); SINGLE-EVENT GATE RUPTURE (SEGR);

MOSFET DEVICES;

EID: 0032307020     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736492     Document Type: Article

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