Semiconductors for terahertz photonics applications

Journal of Physics D: Applied Physics

Volumn 43, Issue 27, 2010, Pages

  Krotkus, Arunas ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC RADIATION; FAR-INFRARED SPECTROSCOPY; FEMTOSECOND LASER PULSE; FEMTOSECOND PULSE LASER; FOURIER SPECTRA; GAAS; HIGH CARRIER MOBILITY; LOW TEMPERATURES; MAIN CHARACTERISTICS; PHOTOEXCITED CARRIERS; PHYSICAL MECHANISM; SEMICONDUCTING COMPOUNDS; SEMICONDUCTOR COMPONENTS; SUBPICOSECOND PULSE; SURFACE EMISSIONS; TERAHERTZ FREQUENCIES; TERAHERTZ PHOTONICS; THZ TIME DOMAIN SPECTROSCOPY; VERSATILE TOOLS; WAVELENGTH RANGES;

CARRIER LIFETIME; CARRIER MOBILITY; ELECTROMAGNETIC PULSE; ELECTROMAGNETIC WAVES; ELECTRON OPTICS; INFRARED SPECTROSCOPY; PULSED LASER APPLICATIONS; SEMICONDUCTOR LASERS; TERAHERTZ WAVES; TIME DOMAIN ANALYSIS; ULTRASHORT PULSES;

TERAHERTZ SPECTROSCOPY;

EID: 77953894452     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/27/273001     Document Type: Article

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