Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 10 B, 2003, Pages

  Yoshimoto, Masahiro ^a   Murata, Satoshi ^a   Chayahara, Akiyoshi ^b   Horino, Yuji ^b   Saraie, Junji ^a   Oe, Kunishige ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Bismuth; GaAsBi; MBE; Metastable alloy; RBS; Semimetal semiconductor alloy; X ray diffraction

Indexed keywords

BISMUTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL FIBERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SOLUBILITY; WAVELENGTH DIVISION MULTIPLEXING; X RAY DIFFRACTION ANALYSIS;

METASTABLE ALLOYS; MOLAR FRACTIONS;

GALLIUM ALLOYS;

EID: 0346328647     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1235     Document Type: Article

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