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Volumn 79, Issue 7, 1996, Pages 3622-3629

Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing

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Indexed keywords


EID: 0009263434     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361417     Document Type: Article
Times cited : (38)

References (42)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.