Hole trapping time measurement in low-temperature-grown gallium arsenide

Applied Physics Letters

Volumn 83, Issue 25, 2003, Pages 5304-5306

  Adomavicius R ^a   Krotkus, A ^a   Bertulis, K ^a   Sirutkaitis, V ^b   Butkus, R ^b   Piskarskas, A ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANNEALING; BERYLLIUM; CARRIER CONCENTRATION; DOPING (ADDITIVES); FREQUENCIES; HOLE TRAPS; LOW TEMPERATURE PHENOMENA; MOLECULAR BEAM EPITAXY; SILICON;

INTERVALENCE BAND ABSORPTION; OPTICAL PULSES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0942288598     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632538     Document Type: Article

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