Highly resistive annealed low-temperature-grown InGaAs with sub- 500 fs carrier lifetimes

Applied Physics Letters

Volumn 85, Issue 21, 2004, Pages 4965-4967

  Baker, C ^a,b,c   Gregory, I S ^a,b,c   Tribe, W R ^a,b,c   Bradley, I V ^a,b,c   Evans, M J ^a,b,c   Linfield, E H ^a,c   Missous, M ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TERAVIEW LTD   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; LASER BEAM EFFECTS; LOW TEMPERATURE EFFECTS; OPTIMIZATION; PHOTOCONDUCTING MATERIALS; SEMICONDUCTOR GROWTH;

CARRIER TRAPPING; EX SITU ANNEALING; LASER EXCITATION; PHOTOCONDUCTIVE DEVICES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 18744383826     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1824179     Document Type: Article

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