Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs

Applied Physics Letters

Volumn 83, Issue 9, 2003, Pages 1719-1721

  Mikulics, M ^a   Marso, M ^a   Kordos P ^a   Stancek S ^b   Kovac P ^b   Zheng, X ^c   Wu, S ^c   Sobolewski, Roman ^c,d  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c University of Rochester   (United States)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; IONS; LASER PULSES; NITROGEN; PHOTODETECTORS;

DARK CURRENTS;

GALLIUM COMPOUNDS;

EID: 0141608101     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1606879     Document Type: Article

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