SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6259-6289

Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications

(1) Nolte, David D a

a PURDUE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; HETEROJUNCTIONS; ION IMPLANTATION; OXYGEN; POINT DEFECTS; PROTONS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; TRANSITION METALS;

GALLIUM PHOSPHIDE; LONGITUDINAL-REFLECTION GEOMETRY; PROTON IMPLANTATION; SEMI-INSULATING SEMICONDUCTORS;

OPTOELECTRONIC DEVICES;

EID: 0032606176 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.370284 Document Type: Article

Times cited : (208)

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