Terahertz emission from InAs surfaces excited by femtosecond laser pulses

Journal of Nanoelectronics and Optoelectronics

Volumn 2, Issue 1, 2007, Pages 108-114

  Krotkus, A ^a   Adomavicius R ^a   Molis, G ^a   Malevich, V L ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

InAs; Nonlinear Optical; TeraHertz

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRIC RECTIFIERS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; INDIUM ARSENIDE; LASER BEAMS; LASER FUSION; LASER PULSES; LASERS; PULSED LASER DEPOSITION; SEMICONDUCTING INDIUM; SEPARATION; ULTRASHORT PULSES;

BAND BENDING; BEAM INTENSITIES; FEMTOSECOND (FS) LASER PULSES; FIELD INDUCED; MONTE CARLO MODELING; OPTICAL RECTIFICATION (OR); SURFACE FIELDS; TERAHERTZ (THZ) EMISSIONS;

PULSED LASER APPLICATIONS;

EID: 41349114743     PISSN: None     EISSN: None     Source Type: Journal    
DOI: 10.1166/jno.2007.011     Document Type: Article

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