Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy

Journal of Applied Physics

Volumn 94, Issue 6, 2003, Pages 3966-3971

  Yano, R ^a   Hirayama, Y ^a,b   Miyashita, S ^c   Uesugi, N ^d   Uehara, S ^e  

^a NTT Basic Research Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NTT Advance Technology Corporation   (Japan)

^d TOHOKU INSTITUTE OF TECHNOLOGY   (Japan)

^e SEIKEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ARSENIC; CRYSTAL DEFECTS; CRYSTAL GROWTH; DIFFUSION; SPECTROSCOPIC ANALYSIS;

PUMP-PROBE SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0141886921     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1602569     Document Type: Article

References (22)

1. D. H. Auston, in Semiconductors and Semimetals, edited by R. B. Marcus (Academic, Boston, 1990), Vol. 28, p. 85.
2. M. O. Manasreh, D. C. Look, K. R. Evans, and C. E. Stutz, Phys. Rev. B 41, 10272 (1990).
3. A. Warren, J. Woodall, J. Freeouf, D. Grishkowsky, D. McInturff, M. Melloch, and N. Otsuka, Appl. Phys. Lett. 57, 1331 (1990).
4. S. Gupta, J. F. Whitaker, and G. A. Mourou, IEEE J. Quantum Electron. 28, 2464 (1992).
5. D. E. Bliss, W. Walukiewics, J. W. Ager III, E. E. Haller, K. T. Chan, and S. Tanigawa, J. Appl. Phys. 71, 1699 (1992).
6. D. E. Bliss, W. Walukiewics, and E. E. Haller, J. Electron. Mater. 22, 1401 (1993).
7. E. S. Harmon, M. R. Melloch, J. M. Woodall, D. D. Nolte, N. Otsuka, and L. Chang, Appl. Phys. Lett. 63, 2248 (1993).
8. X. Liu, A. Prasad, W. M. Chen, A. Kurpiewski, A. Stoschek, Z. Liliental-Weber, and E. R. Weber, Appl. Phys. Lett. 65, 3002 (1994).
9. N. Hozhabri, S.-H. Lee, and K. Alavi, Appl. Phys. Lett. 66, 2546 (1995).
10. A. Krotkus, R. Viselga, K. Bertulis, V. Jasutis, S. Marcinkevic, and U. Olin, Appl. Phys. Lett. 66, 1939 (1995).
11. Z. Liliental-Weber, X. W. Lin, J. Washburn, and W. Schaff, Appl. Phys. Lett. 66, 2086 (1995).
12. A. J. Lochtefeld, M. R. Melloch, J. C. P. Chang, and E. S. Harman, Appl. Phys. Lett. 69, 1465 (1996).
13. P. A. Loukakos, C. Kalpouzos, I. E. Perakis, Z. Hatzopoulos, M. Logaki, and C. Fotakis, Appl. Phys. Lett. 79, 2883 (2001).
14. R. Yano, Y. Hirayama, S. Miyashita, H. Sasabu, N. Uesugi, and S. Uehara, Phys. Lett. A 289, 93 (2001).
15. J.-L. Rouviere, Y. Kim, J. Cunningham, J. A. Rentschler, A. Bourret, and A. Ourmazd, Phys. Rev. Lett. 68, 2798 (1992).
16. J. E. Northrup and S. B. Zhang, Phys. Rev. B 47, 6791 (1993).
17. X. Liu, A. Prasad, J. Nishio, E. R. Weber, Z. Liliental-Weber, and W. Walukiewicz, Appl. Phys. Lett. 67, 279 (1995).
18. T. S. Sosnowski, T. B. Norris, H. H. Wang, P. Grenier, J. F. Whitaker, and C. Y. Sung, Appl. Phys. Lett. 70, 3245 (1997).
19. J. I. Pankove, Optical Processes in Semiconductors (Prentice-Hall, Englewood Cliffs, N.J., 1971), Chap. 18.
20. F. S. Ham, J. Phys. Chem. Solids 6, 335 (1958).
21. D. Stievenard, X. Boddaert, and J. C. Bourgion, Phys. Rev. B 34, 4048 (1986).
22. S. Marcinkevicius, C. Jagadish, H. H. Tan, M. Haminska, K. Korona, R. Adomavicius, and A. Krotkus, Appl. Phys. Lett. 76, 1306 (2001).