High resistivity annealed low-temperature GaAs with 100 fs lifetimes

Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4199-4201

  Gregory, I S ^a,b   Baker, C ^a,b   Tribe, W R ^b   Evans, M J ^b   Beere, H E ^a   Linfield, E H ^a   Davies, A G ^a   Missous, M ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TERAVIEW LTD   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DETECTORS; ELECTRIC CONDUCTIVITY OF SOLIDS; LOW TEMPERATURE EFFECTS; PHOTOCONDUCTIVITY; SEMICONDUCTOR GROWTH;

ANNEALING TEMPERATURE; CARRIER LIFETIMES; CONTINOUS WAVE SYSTEM; TERAHERTZ PHOTOCONDUCTIVE EMITTERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0347410954     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1628389     Document Type: Article

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