Time and spatially resolved photoluminescence measurements of nonstoichiometric GaAs

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 397-399

  Marcinkevicius S ^a   Krotkus, A ^a   Jasutis, V ^a   Bertulis, K ^a   Tan, H H ^b   Jagadish, C ^b   Kaminska, M ^c  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GRAIN SIZE AND SHAPE; IMPURITIES; ION IMPLANTATION; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; TIME MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER RECOMBINATION; CARRIER TRAPPING; POLYCRYSTALLINITY; SPATIALLY RESOLVED MEASUREMENT TECHNIQUE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029755916     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116697     Document Type: Article

References (8)

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