Band gap of GaAs1-xBix, 0 (6) Francoeur, S a Seong, M J a Mascarenhas, A a Tixier, S b Adamcyk, M b Tiedje, T b a NATIONAL RENEWABLE ENERGY LABORATORY (United States) b UNIVERSITY OF BRITISH COLUMBIA (Canada)

Applied Physics Letters

Volumn 82, Issue 22, 2003, Pages 3874-3876

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

BAND GAPS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037970100     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1581983     Document Type: Article

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