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Applied Physics Letters

Volumn 74, Issue 17, 1999, Pages 2462-2464

Time-resolved reflectivity characterization of polycrystalline low-temperature-grown GaAs

(3) Roux, Jean François a Coutaz, Jean Louis a Krotkus, Arunas b

a UNIVERSITÉ DE SAVOIE (France)

b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; ENERGY GAP; LIGHT REFLECTION; LOW TEMPERATURE EFFECTS; POLYCRYSTALLINE MATERIALS; SURFACE ROUGHNESS; ULTRAFAST PHENOMENA;

CARRIER RECOMBINATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032606950 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123881 Document Type: Article

Times cited : (22)

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