Molecular beam epitaxy growth of GaAs1-xBix

Applied Physics Letters

Volumn 82, Issue 14, 2003, Pages 2245-2247

  Tixier, S ^a   Adamcyk, M ^a,d   Tiedje, T ^a   Francoeur, S ^b   Mascarenhas, A ^b   Wei, Peng ^c   Schiettekatte, F ^c  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c UNIVERSITÉ DE MONTRÉAL   (Canada)

^d Lytek Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; EPITAXIAL GROWTH; EXTRAPOLATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; STRAIN; X RAY DIFFRACTION ANALYSIS;

STRUCTURAL DISORDER;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037425189     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1565499     Document Type: Article

References (9)

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9. S. Francoeur, M.-J. Seong, A. Mascarenhas, S. Tixier, M. Adameyk, and T. Tiedje, Appl. Phys. Lett. (to be published).