Effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 152, Issue 2, 1999, Pages 307-313

  Zhang, Yanwen ^a   Ding, E Jiang ^b,c,d   Zhang, Tonghe ^b  

^a LUND INSTITUTE OF TECHNOLOGY   (Sweden)

^b BEIJING NORMAL UNIVERSITY   (China)

^c CCAST WORLD LABORATORY   (China)

^d INSTITUTE OF THEORETICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMS; CARRIER CONCENTRATION; CHEMICAL ACTIVATION; GALLIUM; ION IMPLANTATION; POSITIVE IONS; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY;

NON UNIFORM STOICHIOMETRIC DISTURBANCES; SEMI INSULATING GALLIUM ARSENIDE; SILICON IMPLANTATION;

SEMICONDUCTING SILICON;

EID: 0032680153     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00174-3     Document Type: Article

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