Be-doped low-temperature-grown GaAs material for optoelectronic switches

IEE Proceedings: Optoelectronics

Volumn 149, Issue 3, 2002, Pages 111-115

  Krotkus, A ^a   Bertulis, K ^a   Kaminska, M ^a   Korona, K ^a   Wolos, A ^a   Siegert, J ^a   Marcinkevicius S ^a   Roux, J F ^a   Coutaz, J L ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; HOLE MOBILITY; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAFAST PHENOMENA;

BERYLLIUM-DOPED LOW-TEMPERATURE-GROWN GALLIUM ARSENIDE; OPTOELECTRONIC SWITCHES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036613303     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20020435     Document Type: Article

References (16)

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